t present Cr or Cr

Au platings are formed on metal workpieces electicall or by evaporation at home and abroad

as Cr is resistance to corrosion

wear and tear resistance

reacting slowly with dilute acids

and having a strong adhesive force with the workpiece on which it is formed.So that the workpiece can be well protected

thus extend the life time of the worpiece. Before the epitaxial GaAs wafers being cleaved into lasers

the wafers should be photoetched.Up to now

there has no reports on how to removed the Cr on the channels on the epitaxial GaAs. This paper presents the Cr

Au evaporating technotogy on the epitaxialwafers and the new Cr removing technology.