Relationship between average etching velocity and laser pulse energy density during excimer laser direct etching

WEI Ren-xuan; JIANG De-sheng; ZHOU Zu-de

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Relationship between average etching velocity and laser pulse energy density during excimer laser direct etching

更新时间：2020-08-12

- Relationship between average etching velocity and laser pulse energy density during excimer laser direct etching
- Optics and Precision Engineering Vol. 12, Issue 2, Pages: 231-234(2004)
- 作者机构：
  
  1. 武汉理工大学, 光纤传感技术研究中心, 湖北, 武汉, 430070
  2. 武汉理工大学, 机电工程学院, 湖北, 武汉, 430070
- 作者简介：
- 基金信息：
- DOI：
  CLC： TG665
- Received：09 December 2003，
  
  Revised：26 January 2004，
  
  Published Online：15 April 2004，
  
  Published：15 April 2004
- 稿件说明：
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魏仁选, 姜德生, 周租德. 准分子激光脉冲直写刻蚀速率与能量密度的关系[J]. 光学精密工程, 2004,(2): 231-234

WEI Ren-xuan, JIANG De-sheng, ZHOU Zu-de. Relationship between average etching velocity and laser pulse energy density during excimer laser direct etching[J]. Editorial Office of Optics and Precision Engineering, 2004,(2): 231-234
魏仁选, 姜德生, 周租德. 准分子激光脉冲直写刻蚀速率与能量密度的关系[J]. 光学精密工程, 2004,(2): 231-234 DOI：

WEI Ren-xuan, JIANG De-sheng, ZHOU Zu-de. Relationship between average etching velocity and laser pulse energy density during excimer laser direct etching[J]. Editorial Office of Optics and Precision Engineering, 2004,(2): 231-234 DOI：

摘要

为了探索低成本、大深宽比加工方法

建立了实用的准分子激光微加工系统.以玻璃为实验靶材

用精密微动平台准确调节靶材位置

利用波长248nm的KrF准分子激光器

研究了准分子激光直写刻蚀过程中平均刻蚀速率与激光脉冲能量密度之间的关系.加工出的沟槽剖面形状均呈现锥型

单脉冲烧蚀速率随脉冲数的增加而减小

激光脉冲对材料的刻蚀具有能量阈值

加工槽的深度具有上限值.采用平行激光束或对加工过程进行动态控制还可实现矩形深槽或圆柱深孔的加工.

Abstract

In order to search for an economical high depth-width ratio micro-fabrication method and build up an excimer laser direct etching system

the relationship between average etching velocity and laser pulse energy density during excimer laser direct etching was investigated by using KrF excimer laser with a wavelength of 248 nm to ablate and etch glass material accurately located with a high-precision micro-motion controlling system. Experimental results showed that all the yielded grooves are V-grooves; the single laser pulse etching velocity decreases as the number of laser pulses increases; the depth of the yielded grooves becomes constant when the laser pulses add up to a definite number

there is an upper limit threshold for excimer laser pulse energy density in the etching process; and rectangular deep grooves or cylindrical deep holes can be produced by using parallel laser beams or dynamic control of etching process.

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references

SMUK A Y, LAWANDY N M. Selective etching in laser written semiconductor-doped glasses [J] . Optics Communications, 1998,156: 297-299.

李凤友,李红军,卢振武,等.激光直写系统焦斑整形的研究[J] .光学精密工程,2001,9(1):297-299.LI F Y, LI H J, LU ZH W, et al. Focused spot shaping in laser writing system [J ] . Optics and Precision Engineering, 2001,9(1): 297-299.(in Chinese)

刘文波.准分子激光微加工的应用研究[D] .武汉:武汉工业大学硕士论文,2000.LIU W B. Study of application of micromachining by excimer laser [D] . Wuhan:Wuhan Polytechnology University,2000.(in Chinese)

IHLEMANN J, RRBAHN K. Excimer laser micro machining: fabrication and applications of dielectric masks[J] .Applied Surface Science, 2000,587-592.

BRAUN A, ZIMMER K, HOSSELBARTH B. Excimer laser micromachining and replication of 3D optical surfaces[J] . Applied Surface Science, 1998,911-914.

OHJI H, FRENCH P J, TSUTSUMI K. Fabrication of mechanical structures in p-type silicon using electrochemical etching[J] . Sensors and Actuators, 2000,82: 254-258.

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