Current Status of EUV Lithography

Hiroo Kinoshita

doi:null

您当前的位置：

首页 >

文章列表页 >

Current Status of EUV Lithography

论文 | 更新时间：2020-08-12

- Current Status of EUV Lithography
- Current Status of EUV Lithography
- 光学精密工程 2001年9卷第5期页码：435-441
- 作者机构：
  
  Laboratory-of Advanced Science-and Technology-for Industry Himeji Institute-of Technology, 3-1-2 Kouto, Kamigori, Ako-, Hyogo gun,Japan,678-1025
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： TN305.7
- 收稿日期：2001-08-29，
  
  修回日期：2001-09-17，
  
  网络出版日期：2001-10-15，
  
  纸质出版日期：2001-10-15
- 稿件说明：
移动端阅览
Hiroo Kinoshita . Current Status of EUV Lithography[J]. 光学精密工程, 2001,(5): 435-441

Hiroo Kinoshita . Current Status of EUV Lithography[J]. Editorial Office of Optics and Precision Engineering, 2001,(5): 435-441
Hiroo Kinoshita . Current Status of EUV Lithography[J]. 光学精密工程, 2001,(5): 435-441 DOI：

Hiroo Kinoshita . Current Status of EUV Lithography[J]. Editorial Office of Optics and Precision Engineering, 2001,(5): 435-441 DOI：

摘要

According to the SIA roadmap

by the year of 2006

minimum feature size of 70 nm on wafer is required. Research in U.S.

Japan and Europe is aimed at developing and demonstrating an EUVL tool for critical feature size of 70 nm and below. In Japan

Himeji institute of technology (HIT) has developed an EUVL laboratory tool

which has a practical exposure field of 30mm?28mm. The alignment and assembly of three aspherical mirror optics were completed. A final wave front error of less than 3 nm was achieved. Using this system

exposure experiments are performed using synchrotron facility of New Subaru. Up to now

56nm patterns have been replicated in the exposure field of 10mm?1mm. And using scanning stages

100 nm L & S patterns have been replicated in the field of 10mm?5 mm.

Abstract

According to the SIA roadmap

by the year of 2006

minimum feature size of 70 nm on wafer is required. Research in U.S.

Japan and Europe is aimed at developing and demonstrating an EUVL tool for critical feature size of 70 nm and below. In Japan

Himeji institute of technology (HIT) has developed an EUVL laboratory tool

exposure experiments are performed using synchrotron facility of New Subaru. Up to now

56nm patterns have been replicated in the exposure field of 10mm?1mm. And using scanning stages

100 nm L & S patterns have been replicated in the field of 10mm?5 mm.

关键词

Keywords

references

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

Current Status of Extreme Ultraviolet Lithography in Japan

Development of Debris-free Laser Plasma Sources for EUV Lithography in CIOMP