Current Status of Extreme Ultraviolet Lithography in Japan

Kazuya Ota; Iwao Nishiyama; Taro Ogawa; Ei Yano; Shinji Okazaki

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Current Status of Extreme Ultraviolet Lithography in Japan

论文 | 更新时间：2020-08-12

- Current Status of Extreme Ultraviolet Lithography in Japan
- Current Status of Extreme Ultraviolet Lithography in Japan
- 光学精密工程 2001年9卷第5期页码：424-429
- 作者机构：
  
  ASET EUV Laboratory, Atsugi-Shi, Kanagawa 243-0198, Japan
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： TN305.7
- 收稿日期：2001-08-29，
  
  修回日期：2001-09-22，
  
  网络出版日期：2001-10-15，
  
  纸质出版日期：2001-10-15
- 稿件说明：
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Kazuya Ota, Iwao Nishiyama, Taro Ogawa, Ei Yano, Shinji Okazaki . Current Status of Extreme Ultraviolet Lithography in Japan[J]. 光学精密工程, 2001,(5): 424-429

Kazuya Ota, Iwao Nishiyama, Taro Ogawa, Ei Yano, Shinji Okazaki . Current Status of Extreme Ultraviolet Lithography in Japan[J]. Editorial Office of Optics and Precision Engineering, 2001,(5): 424-429
Kazuya Ota, Iwao Nishiyama, Taro Ogawa, Ei Yano, Shinji Okazaki . Current Status of Extreme Ultraviolet Lithography in Japan[J]. 光学精密工程, 2001,(5): 424-429 DOI：

Kazuya Ota, Iwao Nishiyama, Taro Ogawa, Ei Yano, Shinji Okazaki . Current Status of Extreme Ultraviolet Lithography in Japan[J]. Editorial Office of Optics and Precision Engineering, 2001,(5): 424-429 DOI：

摘要

ASET

Association of Super-advanced Electronics Technologies

has been taking the initiative in developing EUV lithography technology in Japan for the past three years. The aspherical mirror metrology using a visible light point diffraction interferometer (PDI)

the wave front measurement using an at-wavelength PDI

and an at wavelength reflectometry for multilayers

various imaging simulations

multilayer coatings for the mask

the development of absorber materials for mask patterning

the mask substrate cleaning technique

and various photoresist processes have been developed. The visible light PDI employs a 0.5-μm pinhole as an aperture to generate an ideal spherical wave front and can measure a 0.3-N A mirror maximum. The at-wavelength PDI can measure the wave front error of the projection optics. The at-wavelength reflectometer can measure the reflectivity of multilayers and the round-robin test is taking place among ASET

the ALS in Lawrence Berkeley

and BESSY in Germany. The mask cleaning technique employs a supersonic hydro-cleaning technique. We have confirmed that the single layer resists can be used for EUV lithography.

Abstract

ASET

Association of Super-advanced Electronics Technologies

has been taking the initiative in developing EUV lithography technology in Japan for the past three years. The aspherical mirror metrology using a visible light point diffraction interferometer (PDI)

the wave front measurement using an at-wavelength PDI

and an at wavelength reflectometry for multilayers

various imaging simulations

multilayer coatings for the mask

the development of absorber materials for mask patterning

the mask substrate cleaning technique

the ALS in Lawrence Berkeley

and BESSY in Germany. The mask cleaning technique employs a supersonic hydro-cleaning technique. We have confirmed that the single layer resists can be used for EUV lithography.

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Current Status of EUV Lithography