Thermal Diffusion of Si Atoms at the Interface of Mo/Si Bilayers Studied with a Soft X-ray Emission Microscope

Yoshitaka SHITANI; Noboru MIYATA; Mihiro YANAGIHARA; Makoto WATANABE

doi:null

您当前的位置：

首页 >

文章列表页 >

Thermal Diffusion of Si Atoms at the Interface of Mo/Si Bilayers Studied with a Soft X-ray Emission Microscope

论文 | 更新时间：2020-08-12

- Thermal Diffusion of Si Atoms at the Interface of Mo/Si Bilayers Studied with a Soft X-ray Emission Microscope
- Thermal Diffusion of Si Atoms at the Interface of Mo/Si Bilayers Studied with a Soft X-ray Emission Microscope
- 光学精密工程 2001年9卷第5期页码：446-450
- 作者机构：
  
  Institute of Multidisciplinary Research for Advanced Materials, Tokoku University 2-1-1 Katahira, Aoba-, Sendai ku,Japan,980-8577
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： O484.4
- 收稿日期：2001-08-29，
  
  修回日期：2001-09-10，
  
  网络出版日期：2001-10-15，
  
  纸质出版日期：2001-10-15
- 稿件说明：
移动端阅览
Yoshitaka SHITANI, Noboru MIYATA, Mihiro YANAGIHARA, Makoto WATANABE . Thermal Diffusion of Si Atoms at the Interface of Mo/Si Bilayers Studied with a Soft X-ray Emission Microscope[J]. 光学精密工程, 2001,(5): 446-450

Yoshitaka SHITANI, Noboru MIYATA, Mihiro YANAGIHARA, Makoto WATANABE . Thermal Diffusion of Si Atoms at the Interface of Mo/Si Bilayers Studied with a Soft X-ray Emission Microscope[J]. Editorial Office of Optics and Precision Engineering, 2001,(5): 446-450
Yoshitaka SHITANI, Noboru MIYATA, Mihiro YANAGIHARA, Makoto WATANABE . Thermal Diffusion of Si Atoms at the Interface of Mo/Si Bilayers Studied with a Soft X-ray Emission Microscope[J]. 光学精密工程, 2001,(5): 446-450 DOI：

Yoshitaka SHITANI, Noboru MIYATA, Mihiro YANAGIHARA, Makoto WATANABE . Thermal Diffusion of Si Atoms at the Interface of Mo/Si Bilayers Studied with a Soft X-ray Emission Microscope[J]. Editorial Office of Optics and Precision Engineering, 2001,(5): 446-450 DOI：

摘要

Thermal diffusion of Si atoms at the interface in Mo/Si multilayers was observed with an imaging type soft X ray emission microscope developed by us. It was possible to observe the diffusion with 0.2nm depth resolution in the direction normal to the interface by comparing the emission intensity for exactly the same position. The diffusion coefficient of Si atoms in Mo at 600℃ was roughly estimated to be 6.0×10

/s.

Abstract

/s.

关键词

Keywords

references

浏览量

502

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

暂无数据