Development of an Experimental EUVL System

JIN Chun-shui; MA Yue-ying; PEI Shu; CAO Jian-lin

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Development of an Experimental EUVL System

论文 | 更新时间：2020-08-12

- Development of an Experimental EUVL System
- Development of an Experimental EUVL System
- 光学精密工程 2001年9卷第5期页码：418-423
- 作者机构：
  
  Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences Changchun,China,130033
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： TN305.7
- 收稿日期：2001-08-29，
  
  修回日期：2001-10-08，
  
  网络出版日期：2001-10-15，
  
  纸质出版日期：2001-10-15
- 稿件说明：
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JIN Chun-shui, MA Yue-ying, PEI Shu, CAO Jian-lin. Development of an Experimental EUVL System[J]. 光学精密工程, 2001,(5): 418-423

JIN Chun-shui, MA Yue-ying, PEI Shu, CAO Jian-lin. Development of an Experimental EUVL System[J]. Editorial Office of Optics and Precision Engineering, 2001,(5): 418-423
JIN Chun-shui, MA Yue-ying, PEI Shu, CAO Jian-lin. Development of an Experimental EUVL System[J]. 光学精密工程, 2001,(5): 418-423 DOI：

JIN Chun-shui, MA Yue-ying, PEI Shu, CAO Jian-lin. Development of an Experimental EUVL System[J]. Editorial Office of Optics and Precision Engineering, 2001,(5): 418-423 DOI：

摘要

The authors have developed an experimental system for the studies of extreme ultraviolet projection lithography at 13.0nm wavelength

which includes a laser plasma source

an ellipsoidal condenser

a transmission mask and a Schwarzschild optics. The optical system is optimized to achieve 0.1μm resolution over a 0.1mm diameter image field of view and the mirrors of the objective were coated with Mo/Si multilayer to provide 60% reflectance at near normal incidence angle for 13.0nm radiation.

Abstract

The authors have developed an experimental system for the studies of extreme ultraviolet projection lithography at 13.0nm wavelength

which includes a laser plasma source

an ellipsoidal condenser

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