The design and fabrication of DC-contact shunt RF MEMS switch is reported. Au-Au direct contact is achieved by using low stress electroplated Au membrane. Borofloat™ glass is used as substrate. Inside resistance is used to isolate the crosstalk between radio-frequency signal and bias voltage. The distance between the Au membrane and CPW is optimized which make the switch low insertion loss. The contact resistance is 0.1 Ω under the pull-down voltage of 60 V. The insertion loss is -0.03 dB@1 GH

-0.13 dB@10 GHz

-0.19 dB@20 GHz

and in the frequency range from DC to 30 GHz

the insertion loss is less than -0.5 dB; the isolation is -47 dB@1 GHz

-30 dB@10 GHz and -25 dB@20 GHz

and the isolation is better than -23 dB in the frequency range from DC to 30 GHz. The fabricated RF MEMS switch is suitable for the application of frequency range from DC to 30 GHz.