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Mechanism for laser-induced damage bad chip of Micro-LED and optimization of processing parameters
Micro/Nano Technology and Fine Mechanics | 更新时间：2024-05-18
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    • Mechanism for laser-induced damage bad chip of Micro-LED and optimization of processing parameters

    • “科技新闻播报：为提高Micro-LED显示面板制造质量，专家利用COMSOL建立激光双温烧蚀模型，优化了Micro-LED不良芯片的激光去除机理和工艺参数。通过单脉冲激光推算烧蚀阈值，拟合激光参数与烧蚀深度关系，验证模型准确性。研究结果显示，飞秒激光烧蚀模型最大误差为9.28%，优化模式实现快速精准剥离和高质量整平修复，对规模化生产中不良芯片修复具有重要指导作用。”
      ”
    • Optics and Precision Engineering   Vol. 32, Issue 9, Pages: 1360-1370(2024)

    • DOI：10.37188/OPE.20243209.1360    

      CLC： TN249

    • Published：10 May 2024，

      Received：02 February 2024，

      Revised：29 February 2024，

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  • QIAO Jian,WU Zhenduo,PENG Xinhan,et al.Mechanism for laser-induced damage bad chip of Micro-LED and optimization of processing parameters[J].Optics and Precision Engineering,2024,32(09):1360-1370. DOI： 10.37188/OPE.20243209.1360.

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Related Author

CHEN Shuang
LI Meng
LI Yudong
YIN Yimin
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ZHANG Zihao

Related Institution

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Department of Precision Machinery and Precision Instrumentation， University of Science and Technology of China
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