Spin coating of UV-curable resist for imprinting long-wave infrared subwavelength structures

WANG Zhi-jun; LI Yang-ping; ZHOU Xiao-yi; LI Jun; LIU Zheng-tang

doi:10.3788/OPE.20142208.2180

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Spin coating of UV-curable resist for imprinting long-wave infrared subwavelength structures

更新时间：2020-08-13

- Spin coating of UV-curable resist for imprinting long-wave infrared subwavelength structures
- Optics and Precision Engineering Vol. 22, Issue 8, Pages: 2180-2187(2014)
- 作者机构：
  
  凝固技术国家重点实验室, 西北工业大学材料学院,陕西西安,710072
- 作者简介：
- 基金信息：
- DOI：10.3788/OPE.20142208.2180
  CLC： TN305.7
- Received：01 November 2013，
  
  Revised：30 December 2013，
  
  Published：25 August 2014
- 稿件说明：
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王志俊, 李阳平, 周潇逸等. 紫外压印长波红外亚波长结构的涂胶工艺研究[J]. 光学精密工程, 2014,22(8): 2180-2187

WANG Zhi-jun, LI Yang-ping, ZHOU Xiao-yi etc. Spin coating of UV-curable resist for imprinting long-wave infrared subwavelength structures[J]. Editorial Office of Optics and Precision Engineering, 2014,22(8): 2180-2187
王志俊, 李阳平, 周潇逸等. 紫外压印长波红外亚波长结构的涂胶工艺研究[J]. 光学精密工程, 2014,22(8): 2180-2187 DOI： 10.3788/OPE.20142208.2180.

WANG Zhi-jun, LI Yang-ping, ZHOU Xiao-yi etc. Spin coating of UV-curable resist for imprinting long-wave infrared subwavelength structures[J]. Editorial Office of Optics and Precision Engineering, 2014,22(8): 2180-2187 DOI： 10.3788/OPE.20142208.2180.

摘要

采用旋涂法进行了Si表面紫外固化胶涂布研究，并压印出了长波红外亚波长结构图形。用激光共聚焦显微镜观察了旋转涂布胶层的表面形貌，测量了表面粗糙度（Ra）;用椭圆偏振仪测试了胶层厚度，扫描电子显微镜观察了压印图形的表面形貌，并用扫描探针显微镜测量了压印图形的结构高度。结果显示：当匀胶转速较小（如300 r/min）时，胶层中不会产生气泡及针孔等缺陷，胶层的Ra小，但胶层均匀性差；提高转速可以改善胶层均匀性，但同时胶层中会产生大量气泡和针孔等缺陷，且它们不会随匀胶时间的延长而消除。文中提出用四转速匀胶法来同时解决胶层均匀性和膜层气泡等问题，获得的胶层无气泡，Ra为317 nm时与Si衬底表面相当（324 nm），均匀性（最小厚度值与最大厚度值之比）为89.17%，胶层平均厚度为626 nm。结果表明：四转速涂胶法获得的胶层满足紫外压印长波红外亚波长结构的要求，压印的图形均匀、完整、保真性好。

Abstract

The ultraviolet-curing imprinting resist on Si substrates was explored by spin coating method

and the long wave subwavelength structures were imprinted. The surface topography of the coated resist layers was observed by a Laser Scanning Co-focal Microscope (LSCM)

and their surface roughnesses(Ra) were tested. The thicknesses of the resist layers were tested by an ellipsometer

then the surface morphology and the structure heights of the imprinted patterns were tested by a Scanning Electron Microscope (SEM) and a Scanning Probe Microscopy(SPM)

respectively. Results show when spin velocities are as low as 300 r/min

the resist layers have negligible defects

such as gas bubbles

pinholes and very low Ra

meanwhile

it shows a bad uniformity. The uniformity can be improved by increasing spin velocity

however

the bubbles and pinholes in the resist layers are also increased and cannot be decreased by extending the spin time at elevated velocities. A four-spin-velocity coating method was proposed to eliminate the bubbles and pinholes and obtain the resist layers with high uniformity. The obtained resist layers show the roughness to be 317 nm

lower than that of the Si substrate (324 nm) and its uniformity is 89.17%

mean thickness is 626 nm. These results well satisfy the requirement of UV imprinting of long-wave infrared antireflective subwavelength structures and imprinted patterns have the advantages of good uniformity

integrity

and higher fidelity.

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Keywords

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