CMOS图像传感器光子转移曲线辐照后的退化机理

冯婕; 李豫东; 文林; 周东; 马林东

doi:10.3788/OPE.20172510.2676

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CMOS图像传感器光子转移曲线辐照后的退化机理

现代应用光学 | 更新时间：2020-08-13

- CMOS图像传感器光子转移曲线辐照后的退化机理
- Degradation mechanism for photon transfer curve of CMOS image sensor after irradiation
- 光学精密工程 2017年25卷第10期页码：2676-2681
- 作者机构：
  
  中国科学院新疆理化技术研究所材料物理与化学研究室, 新疆乌鲁木齐 830011
- 作者简介：
  
  [ "冯婕(1985-), 女, 新疆乌鲁木齐人, 助理研究员, 2009年于重庆邮电大学获得学士学位, 2014年于中国科学院大学获得博士学位, 主要从事光电成像器件辐射效应与损伤机理研究、光学系统辐射效应研究.E-mail:fengjie@ms.xjb.ac.cn" ]
  [ "李豫东(1982-), 男, 新疆伊犁人, 研究员, 2004年于吉林大学获得学士学位, 2009年于中国科学院长春光学精密机械与物理研究所获得博士学位, 主要从事半导体器件和集成电路的辐射效应与机理、模拟试验方法、试验系统研究.E-mail:lydong@ms.xjb.ac.cn" ]
- 基金信息：
  
  中国科学院西部之光重点资助项目(ZD201301);新疆维吾尔自治区青年科技创新人才培养工程资助项目(qn2015yx035);中国科学院西部之光青年博士资助项目(XBBS201316);中科院西部之光西部青年学者B类项目(2016-QNXZ-B-2);中国科学院青年创新促进会资助项目
- DOI：10.3788/OPE.20172510.2676
  中图分类号： TP212.16;O536
- 收稿日期：2017-06-02，
  
  录用日期：2017-6-29，
  
  纸质出版日期：2017-10-25
- 稿件说明：
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冯婕, 李豫东, 文林, 等. CMOS图像传感器光子转移曲线辐照后的退化机理[J]. 光学精密工程, 2017,25(10):2676-2681.

Jie FENG, Yu-dong LI, Lin WEN, et al. Degradation mechanism for photon transfer curve of CMOS image sensor after irradiation[J]. Optics and precision engineering, 2017, 25(10): 2676-2681.
冯婕, 李豫东, 文林, 等. CMOS图像传感器光子转移曲线辐照后的退化机理[J]. 光学精密工程, 2017,25(10):2676-2681. DOI： 10.3788/OPE.20172510.2676.

Jie FENG, Yu-dong LI, Lin WEN, et al. Degradation mechanism for photon transfer curve of CMOS image sensor after irradiation[J]. Optics and precision engineering, 2017, 25(10): 2676-2681. DOI： 10.3788/OPE.20172510.2676.

摘要

针对EMVA 1288标准测试辐照后互补金属氧化物半导体（CMOS）图像传感器的重要性能参数（光子转移曲线和转换增益）适用范围受限的问题，提出了针对辐照后CMOS图像传感器光子转移曲线和转换增益的改进的测试方法。该方法通过调整测试条件，限制辐照后CMOS图像传感器的暗电流和暗电流非均匀性噪声，求解出辐照后正确的器件性能参数，从而直观地得知辐照所引起的器件性能变化。利用该方法进行了实验测试，结果显示：辐照导致转换增益比辐照前退化了7.82%。依据此结果分析了辐照导致光子转移曲线和转换增益退化的机理，认为转换增益的退化是由于质子辐射引起的电离效应和位移效应导致暗电流、暗电流非均匀性增大所致。本文为掌握CMOS图像传感器的空间辐射效应提供了理论基础。

Abstract

As application scopes of photon transfer curve and conversion gain of a CMOS (Complementary Metal-oxide-Semiconductor)image sensor are limited after irradiated by EMVA 1288 standard testing

an improved testing method of photon transfer curve and conversion gain of CMOS image sensor is presented. By adjusting test conditions

the method limits the dark current and the non-uniform noise of dark current from the CMOS image sensor after irradiation to solve the correct device parameters. By which the device performance changes caused by irradiation are intuitively obtained. An experimental test is performed with the proposed method

and the results show that the switching gain caused by irradiation is reduced by 7.82%. On the basis of the results

the degradation mechanism of photon transfer curve and conversion gain of the CMOS caused by irradiation is analyzed. The results point out that conversion gain degradation comes from the increses of dark current and the non-uniform noise of dark current caused by the proton radiation ionization effect and displacement effect. The paper provides a theoretical basis for mastering the spatial radiation effect of CMOS image sensors.

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references

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