1.湖南大学 机械与运载工程学院 国家高效磨削工程技术研究中心,湖南 长沙 410082
2.佛山市博顿光电科技有限公司,广东 佛山 528200
3.长沙韶光芯材科技有限公司,湖南 长沙 410119
[ "陈艺勤(1988-),男,副教授,2017年于湖南大学获得博士学位,主要从事离子束超精密制造方面的研究。E-mail:chenyiqin@hnu.edu.cn" ]
[ "段辉高(1982-),男,湖南衡阳人,教授,博士生导师,2004年、2010年于兰州大学分别获得学士和博士学位,主要从事微纳制造、微纳光学器件的精密和超精密加工等方面的研究。E-mail:duanhg@hnu.edu.cn" ]
收稿:2026-01-20,
修回:2026-03-03,
纸质出版:2026-04-10
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陈艺勤,冀鸣,邵秋等.基于双离子束溅射沉积工艺优化的极紫外多层反射薄膜界面质量提升[J].光学精密工程,2026,34(07):1087-1096.
CHEN Yiqin,JI Ming,SHAO Qiu,et al.Improving of interfacial quality of extreme ultraviolet multilayer reflective film based on process optimization of dual ion beam sputtering deposition[J].Optics and Precision Engineering,2026,34(07):1087-1096.
陈艺勤,冀鸣,邵秋等.基于双离子束溅射沉积工艺优化的极紫外多层反射薄膜界面质量提升[J].光学精密工程,2026,34(07):1087-1096. DOI: 10.37188/OPE.20263407.1087. CSTR: 32169.14.OPE.20263407.1087.
CHEN Yiqin,JI Ming,SHAO Qiu,et al.Improving of interfacial quality of extreme ultraviolet multilayer reflective film based on process optimization of dual ion beam sputtering deposition[J].Optics and Precision Engineering,2026,34(07):1087-1096. DOI: 10.37188/OPE.20263407.1087. CSTR: 32169.14.OPE.20263407.1087.
在Mo-Si多层膜沉积过程中,Mo与Si原子间的自发热力学混合极易生成硅化物过渡层。与此同时,微观起伏也会在多周期生长的累积效应中不断放大。这种层间相互扩散与界面粗糙度会急剧削弱光学界面的折射率对比度,从而显著降低多层膜的整体反射性能与光刻效率。针对这一问题,深入剖析了界面扩散与薄膜生长的微观物理机制,提出一种斜角沉积与掠角刻蚀相结合的复合优化工艺方法。通过对传统双离子束溅射系统进行深度的定向硬件改造,实现了对溅射粒子能量与入射轨迹的精准调控。实验结果表明,在无需引入额外界面扩散阻挡层(避免了阻挡层带来的光吸收损耗)的条件下,该方法成功将Mo-Si界面的扩散层厚度大幅压减至0.6 nm,层间粗糙度严格控制在0.2 nm以下,为EUV高反射Mo-Si多层膜系制造提供了潜在可行的工艺指导。
In the fabrication of Mo-Si multilayers, achieving smooth and sharp interfaces is critical for realizing high reflectivity in extreme ultraviolet (EUV) light, as atomic intermixing between adjacent Mo and Si layers along with microscopic interfacial fluctuations can significantly degrade EUV reflectivity. To address this challenge, we propose a process portfolio that combines angular deposition with flood ion beam etching to enhance interface quality. By utilizing stage modifications in dual ion beam sputtering, the incident angle of the sputtered atom flux during deposition and the parameters of the auxiliary ion beam for polishing can be precisely controlled to suppress intermixing and interfacial fluctuations. Experimental results show that the thickness of the intermixing layer is reduced to 0.6 nm, and interfacial roughness is suppressed to 0.2 nm using this approach. This method fundamentally improves the interfacial quality of Mo-Si multilayers and offers a practical solution for the fabrication of high-reflectance EUV optics.
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