In situ Monitoring Etch Process and Endpoint for LSI by the Plasma Emission Spectroscopy

Mi Baoyong

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In situ Monitoring Etch Process and Endpoint for LSI by the Plasma Emission Spectroscopy

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- In situ Monitoring Etch Process and Endpoint for LSI by the Plasma Emission Spectroscopy
- Optics and Precision Engineering Vol. 4, Issue 3, Pages: 75-80(1996)
- 作者机构：
  
  中国科学院长春光学精密机械研究所长春,130022
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：18 December 1995，
  
  Published Online：15 June 1996，
  
  Published：15 June 1996
- 稿件说明：
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米宝永. 大规模集成电路刻蚀过程和终点的在线监测──等离子发射光谱法[J]. 光学精密工程, 1996,(3): 75-80

Mi Baoyong. In situ Monitoring Etch Process and Endpoint for LSI by the Plasma Emission Spectroscopy[J]. Editorial Office of Optics and Precision Engineering, 1996,(3): 75-80
米宝永. 大规模集成电路刻蚀过程和终点的在线监测──等离子发射光谱法[J]. 光学精密工程, 1996,(3): 75-80 DOI：

Mi Baoyong. In situ Monitoring Etch Process and Endpoint for LSI by the Plasma Emission Spectroscopy[J]. Editorial Office of Optics and Precision Engineering, 1996,(3): 75-80 DOI：

摘要

文章叙述了大规模集成电路(LSI)等离子和反应离子刻蚀原理及在线监测刻蚀过程的基本方法。详述了用等离子发射光谱法进行LSI离子刻蚀过程监测的具体实施和实验结果

得到了80Å的动态监测精度和0.3cm

的最小可监测面积。最后文章还讨论了影响监测精度的因素。

Abstract

This paper describes the etching principe of the plasma etch and the reactive-ion etch for Large scale integration of circuits and basic methods for monitoring etch process on line.Implementation of monitoring etch process for large scale integration of circuits by the plasma emission spectroscopy and results of monitoring are described in the paper in detail.The minimum area monitored of 0.3 cm

and the dynamic monitoring accuracy of less than 80Å have been obtained. Finally the paper will discuss factors influellde on monitoring precision.

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Related Author

杨兆军

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吉林大学机械学院

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