Analysis or Diffraction Intensity Changing Ruling under Extreme Small Lithography Gap

Fu Yongqi; Zhao Xingguo

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Analysis or Diffraction Intensity Changing Ruling under Extreme Small Lithography Gap

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- Analysis or Diffraction Intensity Changing Ruling under Extreme Small Lithography Gap
- Optics and Precision Engineering Vol. 4, Issue 3, Pages: 91-94(1996)
- 作者机构：
  
  中国科学院长春光学精密机械研究所长春,130022
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：15 January 1996，
  
  Published Online：15 June 1996，
  
  Published：15 June 1996
- 稿件说明：
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付永启, 赵兴国. 极小刻划间隙下的衍射光强度变化规律分析[J]. 光学精密工程, 1996,(3): 91-94

Fu Yongqi, Zhao Xingguo. Analysis or Diffraction Intensity Changing Ruling under Extreme Small Lithography Gap[J]. Editorial Office of Optics and Precision Engineering, 1996,(3): 91-94
付永启, 赵兴国. 极小刻划间隙下的衍射光强度变化规律分析[J]. 光学精密工程, 1996,(3): 91-94 DOI：

Fu Yongqi, Zhao Xingguo. Analysis or Diffraction Intensity Changing Ruling under Extreme Small Lithography Gap[J]. Editorial Office of Optics and Precision Engineering, 1996,(3): 91-94 DOI：

摘要

讨论了极小刻划间隙下的衍射场光强度分布规律

并以单缝为例分析了当缝宽与波长改变时

相对光强度变化规律

补充和完善了使用普通平行光照明系统时的接近式光刻衍射场理论。

Abstract

Distribution rule of diffraction intensity under extrme small lithographic gap was discussed in this paper. The relative intensity cnanging rule was analysed when slit width and wavelength changed using single slit as example

complemented the diffraction theory of proximity photolithography using ordinary parallel light illumination system.

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