A Study of Interface Electrical Characteristics for Passivation Films on Hg1-xCdxTe

Zhang Xinchang; Wang Rongxing

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A Study of Interface Electrical Characteristics for Passivation Films on Hg_1-xCd_xTe

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- A Study of Interface Electrical Characteristics for Passivation Films on Hg_1-xCd_xTe
- Optics and Precision Engineering Vol. 4, Issue 5, Pages: 55-60(1996)
- 作者机构：
  
  中国科学院上海技术物理研究所, 上海 200083
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：01 August 1996，
  
  Published Online：15 October 1996，
  
  Published：15 October 1996
- 稿件说明：
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张新昌, 王戎兴. 碲镉汞表面纯化膜界面电学特性研究[J]. 光学精密工程, 1996,4(5): 55-60

Zhang Xinchang, Wang Rongxing. A Study of Interface Electrical Characteristics for Passivation Films on Hg1-xCdxTe[J]. Editorial Office of Optics and Precision Engineering, 1996,4(5): 55-60
张新昌, 王戎兴. 碲镉汞表面纯化膜界面电学特性研究[J]. 光学精密工程, 1996,4(5): 55-60 DOI：

Zhang Xinchang, Wang Rongxing. A Study of Interface Electrical Characteristics for Passivation Films on Hg1-xCdxTe[J]. Editorial Office of Optics and Precision Engineering, 1996,4(5): 55-60 DOI：

摘要

利用MIS结构。在国内首次研究了新型热蒸发CdTe/ZnS复合钝化膜与碲镉汞之间的界面电学特性。发现CdTe/ZnS双层膜在适当工艺条件下。固定电荷密度为-410

-2

慢态密度为5.110

-2

快态密度为2.710

-2

-1

.以上参数优于目前光伏器件采用的单层ZnS钝化膜

说明CdTe/ZnS复合膜是光伏器件的优良钝化膜。同时也研究了其它两种钝化膜

单层ZnS膜和阳极氧化膜/CdTe/ZnS三层膜

发现单层ZnS膜时间稳定性不好

而三层膜界面呈高密度固定正电荷

均不是理想的钝化膜。并组建了一套MISCV/GV测量系统

编制相应的测试、处理软件。

Abstract

For the first time

by MIS test structure

we have investigated a new type of passivation film GdTe/ZnS for HgCdTe.With proper processing conditions

the interface electicaI properties are: the flat band voltage V

the fixed charge density~-4.010

-2

the slow state density~5.110

-2

and the interface state density~2.710

-2

-1

.These results show CdTe/ZnS film is superior to ZnS

and suitable for passivation of HgCdTe PV devices.We have also investigated single layer ZnS and anodic oxideICdTe/ZnS triple Iayer film. And set up a mea-surement system for MIS GV/GV characteristics

including related hardware and software.

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