In Situ Monitoring of Etching End-Point for Plasma and Reactive ion Etching by the Optical Reflection

Mi Baoyong

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In Situ Monitoring of Etching End-Point for Plasma and Reactive ion Etching by the Optical Reflection

更新时间：2020-08-12

- In Situ Monitoring of Etching End-Point for Plasma and Reactive ion Etching by the Optical Reflection
- Optics and Precision Engineering Vol. 5, Issue 3, Pages: 90-95(1997)
- 作者机构：
  
  中国科学院长春光学精密机械研究所, 长春, 130022
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：28 October 1996，
  
  Published Online：15 April 1997，
  
  Published：15 April 1997
- 稿件说明：
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王淑红, 李福田. 紫外平面全息正弦光栅与闪耀光栅部分特性的理论研究[J]. 光学精密工程, 1997,(2): 12-18

Wang Shuhong, Li Futian. Study on Some Characteristics of Planar Holographic Sinusoidal Gratings and Blazed Gratings Used in UV Region in Theory[J]. Editorial Office of Optics and Precision Engineering, 1997,(2): 12-18
王淑红, 李福田. 紫外平面全息正弦光栅与闪耀光栅部分特性的理论研究[J]. 光学精密工程, 1997,(2): 12-18 DOI：

Wang Shuhong, Li Futian. Study on Some Characteristics of Planar Holographic Sinusoidal Gratings and Blazed Gratings Used in UV Region in Theory[J]. Editorial Office of Optics and Precision Engineering, 1997,(2): 12-18 DOI：

摘要

叙述了用光学反射法在线监测LSI等离子及反应离子刻蚀过程和终点的监测原理与具体实施。所设计的仪器获得了优于80Å的动态监测精度及小于0.3cm

的最小监测面积。比较了用光学反射法和等离子发射光谱法得到的监测结果

指出了影响光学反射法监测精度的因素

提出了切实可行的解决办法。

Abstract

This paper describes the principle of end-point monitoring of the plasma etch and the reactive ion etch for LSI by the optical reflection

and implementation of the optical reflection. The minimum area monitored of 0.3cm

and the dynamic monitoring accuracy of less than 80 Å have been obtained by the instrument designed. We compared monitored result of the optical reflection with the emission spectroscopy. Finally the factor influenced on monitoring precsion of the optical reflection is discussed in the paper

and put forward solvable methods.

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