Investigation of Reactive Ion Etching of Fused Quartz

ZHOU Ming-Bao; CUI Zheng; Prewett D P

doi:null

您当前的位置：

首页 >

文章列表页 >

Investigation of Reactive Ion Etching of Fused Quartz

更新时间：2020-08-12

- Investigation of Reactive Ion Etching of Fused Quartz
- Optics and Precision Engineering Vol. 7, Issue 2, Pages: 67-72(1999)
- 作者机构：
  
  1. 中国科学院光电技术研究所, 微细加工光学技术国家重点实验室成都,610209
  2. 英国卢瑟福国家实验室微结构中心
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：14 July 1997，
  
  Revised：25 August 1998，
  
  Published Online：15 April 1999，
  
  Published：15 April 1999
- 稿件说明：
移动端阅览
周明宝, 崔铮, Prewett D P . 用CHF<SUB>3</SUB>/Ar为工作气体刻蚀融石英[J]. 光学精密工程, 1999,(2): 67-72

ZHOU Ming-Bao, CUI Zheng, Prewett D P . Investigation of Reactive Ion Etching of Fused Quartz[J]. Editorial Office of Optics and Precision Engineering, 1999,(2): 67-72
周明宝, 崔铮, Prewett D P . 用CHF<SUB>3</SUB>/Ar为工作气体刻蚀融石英[J]. 光学精密工程, 1999,(2): 67-72 DOI：

ZHOU Ming-Bao, CUI Zheng, Prewett D P . Investigation of Reactive Ion Etching of Fused Quartz[J]. Editorial Office of Optics and Precision Engineering, 1999,(2): 67-72 DOI：

摘要

报道了用氟利昂CHF

和氩气Ar作工作气体的反应离子刻蚀融石英的技术。研究了气体流速、腔压和射频等离子体功率对刻蚀速度的影响

并分析了刻蚀工艺对样品表面的污染

同时也考察了刻蚀工艺的均匀性和重复性。为了优化刻蚀工艺

采用Rs1/Discover软件工具设计优化实验。实验中射频等离子体功率范围在120～160W

氩气和氟利昂流速分别在15～35sccm(1cm

/min standard cubic centimeter/minute)和20～50sccm范围

腔压在13～19Pa范围

相应的刻蚀速度为15～25nm/min.

Abstract

In this paper we report the reactive ion etching(RIE)of quartz by using CHF

and argon.The effects of gas flow rate

chamber pressure

and rf(radio frequency)plasma power on the etch rate were investigated and the surface contamination due to RIE was examined.The quartz etch depth uniformity and repeatability was also examined.In order to optimise the etch process

the RS1/Discover software tool was used to design the experiments.The rf plasma power varied between 120 and 160 watts.Argon and CHF

flow rates were 15-35 sccm and 20-50 sccm respectively

and pressure was in the range of 13-19 Pa.The etch rate varied between 15 and 25 nm/min.

关键词

Keywords

references

Views

870

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

The polishing method for polyimide membrane based on reactive ion etching

Polishing method for polyimide membranes based on reactive ion etching

Related Author

YANG Zheng

JIN Zhiwei

CHEN Jianjun

RAO Xianhua

YIN Shaoyun

WU Peng

Zheng YANG

Zhi-wei JIN

Related Institution

Chongqing Institute of Green and Intelligent Technology， Chinese Academy of Sciences

2〖JP2〗Chongqing Key Laboratory of MultiScale Manufacturing Technology

Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences

Chongqing Key Laboratory of Multi-Scale Manufacturing Technology

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176855 Email：gxjmgc@ciomp.ac.cn
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰