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中国科学院 长春光学精密机械与物理研究所,吉林 长春,中国,130033
Received:10 September 1999,
Revised:11 October 1999,
Published Online:15 February 2000,
Published:15 February 2000
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王世杰. IGBT栅极驱动技术探讨[J]. 光学精密工程, 2000,(1): 76-78
WANG Shi-jie . Technique of IGBT gate driving[J]. Editorial Office of Optics and Precision Engineering, 2000,(1): 76-78
王世杰. IGBT栅极驱动技术探讨[J]. 光学精密工程, 2000,(1): 76-78 DOI:
WANG Shi-jie . Technique of IGBT gate driving[J]. Editorial Office of Optics and Precision Engineering, 2000,(1): 76-78 DOI:
绝缘栅双极二级管(IGBT)作为一种可控开关
获得了广泛应用.IGBT的栅极驱动技术是其应用的一个重要方面.在本文中着重讨论了IGBT栅极驱动及保护的基本问题
并介绍了几个新的应用实例.
Insulated Gate Bipolar Transistor(IGBT)as controllable switch
has been applied widely. Technique of gate driving is an important aspect in IGBT usage. In this paper
technique of gate driving and protection of IGBT are described. Three examples of IGBT gate driving circuit are presented.
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