Current Status of EUV Lithography

Hiroo Kinoshita

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Current Status of EUV Lithography

更新时间：2020-08-12

- Current Status of EUV Lithography
- Optics and Precision Engineering Vol. 9, Issue 5, Pages: 435-441(2001)
- 作者机构：
  
  Laboratory-of Advanced Science-and Technology-for Industry Himeji Institute-of Technology, 3-1-2 Kouto, Kamigori, Ako-, Hyogo gun,Japan,678-1025
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN305.7
- Received：29 August 2001，
  
  Revised：17 September 2001，
  
  Published Online：15 October 2001，
  
  Published：15 October 2001
- 稿件说明：
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Hiroo Kinoshita . Current Status of EUV Lithography[J]. 光学精密工程, 2001,(5): 435-441

Hiroo Kinoshita . Current Status of EUV Lithography[J]. Editorial Office of Optics and Precision Engineering, 2001,(5): 435-441
Hiroo Kinoshita . Current Status of EUV Lithography[J]. 光学精密工程, 2001,(5): 435-441 DOI：

Hiroo Kinoshita . Current Status of EUV Lithography[J]. Editorial Office of Optics and Precision Engineering, 2001,(5): 435-441 DOI：

摘要

According to the SIA roadmap

by the year of 2006

minimum feature size of 70 nm on wafer is required. Research in U.S.

Japan and Europe is aimed at developing and demonstrating an EUVL tool for critical feature size of 70 nm and below. In Japan

Himeji institute of technology (HIT) has developed an EUVL laboratory tool

which has a practical exposure field of 30mm?28mm. The alignment and assembly of three aspherical mirror optics were completed. A final wave front error of less than 3 nm was achieved. Using this system

exposure experiments are performed using synchrotron facility of New Subaru. Up to now

56nm patterns have been replicated in the exposure field of 10mm?1mm. And using scanning stages

100 nm L & S patterns have been replicated in the field of 10mm?5 mm.

Abstract

According to the SIA roadmap

by the year of 2006

minimum feature size of 70 nm on wafer is required. Research in U.S.

Japan and Europe is aimed at developing and demonstrating an EUVL tool for critical feature size of 70 nm and below. In Japan

Himeji institute of technology (HIT) has developed an EUVL laboratory tool

exposure experiments are performed using synchrotron facility of New Subaru. Up to now

56nm patterns have been replicated in the exposure field of 10mm?1mm. And using scanning stages

100 nm L & S patterns have been replicated in the field of 10mm?5 mm.

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