In addition to describing the conduction and growing mechanism of ITO films
the paper also discusses the influence of the ratio of indium to tin
the oxygen partial pressure
the substrate temperature and the evaporation rate on electrical and optical properties of the ITO films prepared by ion aided deposition. Under the optimized preparation conditions
electrical resistivity is about 3.0?10
-4
cm
and the average visible transmittance is better than 80%. By an atomic force microscope
the surface of the film had been examined.
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Keywords
references
Mizuhashi M. Electrical properties of vacuum-deposited indium oxide films[J]. Thin Solid Films,1980(70):91-99.
Cui Yuanri,Xu Xinghao.Deposition of transparent conducting indium tin oxide thin films by reactive ion plating[J].Thin Solid Films, 1984(115):195-201.
Hamberg I,Grmqvist C G.Evaporated sn-doped indium oxide films: basic optical properties and applications to energy-efficient windows[J].J. Appl. Phys, 1986,60(11):123-159.
Kim J.S, Cacialli F. Increase of carriers density and reduction of hall mobilities in oxygen plasma treated indium-tin-oxide anodes[J]. Appl.Phys.Lett,1999,75(5):19-21.