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Thermal Diffusion of Si Atoms at the Interface of Mo/Si Bilayers Studied with a Soft X-ray Emission Microscope
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    • Thermal Diffusion of Si Atoms at the Interface of Mo/Si Bilayers Studied with a Soft X-ray Emission Microscope

    • Optics and Precision Engineering   Vol. 9, Issue 5, Pages: 446-450(2001)
    • CLC: O484.4
    • Received:29 August 2001

      Revised:10 September 2001

      Published Online:15 October 2001

      Published:15 October 2001

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  • Yoshitaka SHITANI, Noboru MIYATA, Mihiro YANAGIHARA, Makoto WATANABE . Thermal Diffusion of Si Atoms at the Interface of Mo/Si Bilayers Studied with a Soft X-ray Emission Microscope[J]. Editorial Office of Optics and Precision Engineering, 2001,(5): 446-450 DOI:

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