Thermal Diffusion of Si Atoms at the Interface of Mo/Si Bilayers Studied with a Soft X-ray Emission Microscope
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Thermal Diffusion of Si Atoms at the Interface of Mo/Si Bilayers Studied with a Soft X-ray Emission Microscope
Optics and Precision EngineeringVol. 9, Issue 5, Pages: 446-450(2001)
作者机构:
Institute of Multidisciplinary Research for Advanced Materials, Tokoku University 2-1-1 Katahira, Aoba-, Sendai ku,Japan,980-8577
作者简介:
基金信息:
DOI:
CLC:O484.4
Received:29 August 2001,
Revised:10 September 2001,
Published Online:15 October 2001,
Published:15 October 2001
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Yoshitaka SHITANI, Noboru MIYATA, Mihiro YANAGIHARA, Makoto WATANABE . Thermal Diffusion of Si Atoms at the Interface of Mo/Si Bilayers Studied with a Soft X-ray Emission Microscope[J]. 光学精密工程, 2001,(5): 446-450
Yoshitaka SHITANI, Noboru MIYATA, Mihiro YANAGIHARA, Makoto WATANABE . Thermal Diffusion of Si Atoms at the Interface of Mo/Si Bilayers Studied with a Soft X-ray Emission Microscope[J]. Editorial Office of Optics and Precision Engineering, 2001,(5): 446-450
Yoshitaka SHITANI, Noboru MIYATA, Mihiro YANAGIHARA, Makoto WATANABE . Thermal Diffusion of Si Atoms at the Interface of Mo/Si Bilayers Studied with a Soft X-ray Emission Microscope[J]. 光学精密工程, 2001,(5): 446-450DOI:
Yoshitaka SHITANI, Noboru MIYATA, Mihiro YANAGIHARA, Makoto WATANABE . Thermal Diffusion of Si Atoms at the Interface of Mo/Si Bilayers Studied with a Soft X-ray Emission Microscope[J]. Editorial Office of Optics and Precision Engineering, 2001,(5): 446-450DOI:
Thermal Diffusion of Si Atoms at the Interface of Mo/Si Bilayers Studied with a Soft X-ray Emission Microscope
Thermal diffusion of Si atoms at the interface in Mo/Si multilayers was observed with an imaging type soft X ray emission microscope developed by us. It was possible to observe the diffusion with 0.2nm depth resolution in the direction normal to the interface by comparing the emission intensity for exactly the same position. The diffusion coefficient of Si atoms in Mo at 600℃ was roughly estimated to be 6.0×10
17
cm
2
/s.
Abstract
Thermal diffusion of Si atoms at the interface in Mo/Si multilayers was observed with an imaging type soft X ray emission microscope developed by us. It was possible to observe the diffusion with 0.2nm depth resolution in the direction normal to the interface by comparing the emission intensity for exactly the same position. The diffusion coefficient of Si atoms in Mo at 600℃ was roughly estimated to be 6.0×10