Development of an Experimental EUVL System

JIN Chun-shui; MA Yue-ying; PEI Shu; CAO Jian-lin

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Development of an Experimental EUVL System

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- Development of an Experimental EUVL System
- Optics and Precision Engineering Vol. 9, Issue 5, Pages: 418-423(2001)
- 作者机构：
  
  Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences Changchun,China,130033
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN305.7
- Received：29 August 2001，
  
  Revised：08 October 2001，
  
  Published Online：15 October 2001，
  
  Published：15 October 2001
- 稿件说明：
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JIN Chun-shui, MA Yue-ying, PEI Shu, CAO Jian-lin. Development of an Experimental EUVL System[J]. 光学精密工程, 2001,(5): 418-423

JIN Chun-shui, MA Yue-ying, PEI Shu, CAO Jian-lin. Development of an Experimental EUVL System[J]. Editorial Office of Optics and Precision Engineering, 2001,(5): 418-423
JIN Chun-shui, MA Yue-ying, PEI Shu, CAO Jian-lin. Development of an Experimental EUVL System[J]. 光学精密工程, 2001,(5): 418-423 DOI：

JIN Chun-shui, MA Yue-ying, PEI Shu, CAO Jian-lin. Development of an Experimental EUVL System[J]. Editorial Office of Optics and Precision Engineering, 2001,(5): 418-423 DOI：

摘要

The authors have developed an experimental system for the studies of extreme ultraviolet projection lithography at 13.0nm wavelength

which includes a laser plasma source

an ellipsoidal condenser

a transmission mask and a Schwarzschild optics. The optical system is optimized to achieve 0.1μm resolution over a 0.1mm diameter image field of view and the mirrors of the objective were coated with Mo/Si multilayer to provide 60% reflectance at near normal incidence angle for 13.0nm radiation.

Abstract

The authors have developed an experimental system for the studies of extreme ultraviolet projection lithography at 13.0nm wavelength

which includes a laser plasma source

an ellipsoidal condenser

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