Research on SU-8 resist photolithography process

ZHANG Li-guo; CHEN Di; YANG Fan; LI Yi-gui

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Research on SU-8 resist photolithography process

更新时间：2020-08-12

- Research on SU-8 resist photolithography process
- Optics and Precision Engineering Vol. 10, Issue 3, Pages: 266-270(2002)
- 作者机构：
  
  上海交通大学, 微纳米科学技术研究院上海,200030
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN305.7
- Received：01 December 2001，
  
  Revised：09 April 2002，
  
  Published Online：15 June 2002，
  
  Published：15 June 2002
- 稿件说明：
移动端阅览
张立国, 陈迪, 杨帆, 李以贵. SU-8胶光刻工艺研究[J]. 光学精密工程, 2002,(3): 266-270

ZHANG Li-guo, CHEN Di, YANG Fan, LI Yi-gui. Research on SU-8 resist photolithography process[J]. Editorial Office of Optics and Precision Engineering, 2002,(3): 266-270
张立国, 陈迪, 杨帆, 李以贵. SU-8胶光刻工艺研究[J]. 光学精密工程, 2002,(3): 266-270 DOI：

ZHANG Li-guo, CHEN Di, YANG Fan, LI Yi-gui. Research on SU-8 resist photolithography process[J]. Editorial Office of Optics and Precision Engineering, 2002,(3): 266-270 DOI：

摘要

SU-8胶是一种基于环氧SU-8树脂的环氧型的、近紫外光、负光刻胶.其专门用于在非常厚的底层上需要高深宽比的应用.但是SU-8胶对工艺参数的改变非常敏感.本文对影响光刻后图形质量的主要工艺参数前烘温度和时间、中烘温度和时间、曝光时间及显影时间进行了研究

发现前烘时间和显影时间是影响图形分辨率及高深宽比的最主要的参数.随后给出了200μm厚SU-8光刻胶的建议工艺条件:200μm/s甩胶

1h的95°C前烘

近紫外光(400nm)接触式曝光

95°C的中烘 30min

PGMEA中显影20min.另外对实验中实现的主要问题基片弯曲和光刻胶的难以去除作了一定的探讨

给出了合理化建议:对于基片弯曲可采用以下四种措施来降低

降低中烘的温度同时增加中烘的时间、用厚硅片来代替薄硅片、对于薄硅片在前烘后可用金刚刀切成4～8小片、适当的设计掩模板;对于光刻胶的去除用热丙酮泡、超声清洗、反应离子刻蚀和高温灰化法相结合

能达到较好的效果.

Abstract

SU-8 resist is an epoxy-type

near-UV

negative photoresist based on EPON SU-8 resin.The resist has been specifically developed for the applications requiring high aspect ratios in very thick layers. However

this photoresist has proven very sensitive to process variations. The main process variations influencing the pattern such as pre-and postbake temperature and time

exposure time and development time have been studied. And the conclusion that prebake and development time are the main factors affecting the image’s resolution and aspect-ratio

has been drawn.After analyzing the experiment results

a proposed fabrication process for 200μm SU-8 application is given as follows:coating at a speed of 200μm/s

prebaking at 95°C for 1 hour

near-UV（400nm） contacting lithography

postbaking at 95°C for 30 min and development for 20 min. In addition

the main two problems involved in the experiment are researched.One is the bend of substrate

which can be resolved by the following solutions:decreasing the postbake temperature and increasing the postbake time

using thick wafer instead of thin one

dividing the thin wafer into 4～8 pieces and designing the mask reasonably.The other is the removal of SU-8

which can be resolved by the combination of marinating in hot acetone

ultrasonic cleanout

RIE and cineration at high temperature.

关键词

Keywords

references

Bertsch A, Lorenz L, Renaud P. 3D microfabrication by combining microstereolithography and thick resist UV lithography [J]. Sensors and Actuators,1999,73:14-23.

Bogdanov L A, Peredkov S S. Use of SU-8 photoresist for very high aspect ratio x-ray lithography [J]. Microelectronics Engineering,2000,53:493-496.

Lorenz H, Despont M, Fahrni N,et al. High-aspect ratio, ultrathick, negative-tone near-UV photoresist and its application for MEMS[J]. Sensors and Actuators,1998,A64:33-39.

Zhang J, Tan L K, Gong Q H. Characterization of the polymerization of SU-8 photoresist and its application in micro-electro-mechanical systems [J]. Polymer Testing,2001,20:693-701.

Eyre B, Blosiu J. Taguchi optimization for the processing epon SU-8 resist[A].MEMS'98,IEEE,Heidelberg[C].1998.218-222.

Labianca C N, Gelorme D J, Lee Y K,et al. High aspect ratio optical resist chemistry for MEMS application[A].in: Proceeding of 4th International symposium on Magnetic Materials, Processes and Devices[C]. Chicago, 1993.386-396.

Ghantal G, Khan M. SU8 resist for low-cost X-ray patterning of high-resolution, high-aspect-ratio MEMS[J]. Microelectrionics Journal,2002,33:101-105.

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