Measurement of residual stress in molybdenum/silicon multilayer coat ings

XIANG Peng; JIN Chun-shui

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Measurement of residual stress in molybdenum/silicon multilayer coat ings

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- Measurement of residual stress in molybdenum/silicon multilayer coat ings
- Optics and Precision Engineering Vol. 11, Issue 1, Pages: 62-67(2003)
- 作者机构：
  
  中国科学院长春光学精密机械与物理研究所, 应用光学国家重点实验室,吉林长春,130022
- 作者简介：
- 基金信息：
- DOI：
  CLC： O484
- Received：17 July 2002，
  
  Revised：15 December 2002，
  
  Published Online：15 February 2003，
  
  Published：15 February 2003
- 稿件说明：
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向鹏, 金春水. Mo/Si多层膜残余应力的研究[J]. 光学精密工程, 2003,(1): 62-67

XIANG Peng, JIN Chun-shui. Measurement of residual stress in molybdenum/silicon multilayer coat ings[J]. Editorial Office of Optics and Precision Engineering, 2003,(1): 62-67
向鹏, 金春水. Mo/Si多层膜残余应力的研究[J]. 光学精密工程, 2003,(1): 62-67 DOI：

XIANG Peng, JIN Chun-shui. Measurement of residual stress in molybdenum/silicon multilayer coat ings[J]. Editorial Office of Optics and Precision Engineering, 2003,(1): 62-67 DOI：

摘要

在极紫外光刻技术中

光学系统对多层膜光学元件表面面形精度有严格的要求

并且多层膜光学元件需要较高的反射率.由于多层膜中存在的内应力将改变光学元件的表面面形

因此在不减少反射率的前提下

一定要减少或补偿多层膜内的残余应力.论述了Mo/Si多层膜应力产生的原因和几种减少与补偿应力的技术

介绍应力的几种测量方法.

Abstract

The stringent surface figure requirements for the multilayer-c oated elements in an extreme ultraviolet (EUV) projection lithography system mak es it desirable to minimize the deformation resulting from multiplayer film stress es. However

the stress must be reduced or compensated without decreasing EUV refl ectivity because the reflectivity has a strong impact on the throughput of an EUV lithog raphy tool. Several stress reduction and compensation techniques applicable to Mo/Si multilayer coatings

and several stress measurem ent methods are discussed in detail.

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Keywords

references

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