Vacuum microelectronic pressure sensor

WEN Zhi-yu; WEN Zhong-quan; XU Shi-liu; LIU Yu-kui; ZHANG Zheng-yuan; CHEN Gang; YANG Guo-

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Vacuum microelectronic pressure sensor

更新时间：2020-08-12

- Vacuum microelectronic pressure sensor
- Optics and Precision Engineering Vol. 12, Issue 6, Pages: 603-607(2004)
- 作者机构：
  
  1. 重庆大学, 光电工程学院重庆,400044
  2. 中国电子科技集团, 第24研究所模拟集成电路重点实验室重庆,400060
- 作者简介：
- 基金信息：
- DOI：
  CLC： TP212.1
- Received：22 October 2004，
  
  Revised：10 November 2004，
  
  Published Online：15 December 2004，
  
  Published：15 December 2004
- 稿件说明：
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温志渝, 温中泉, 徐世六, 刘玉奎, 张正元, 陈刚, 杨国渝. 真空微电子压力传感器的研制[J]. 光学精密工程, 2004,(6): 603-607

WEN Zhi-yu, WEN Zhong-quan, XU Shi-liu, LIU Yu-kui, ZHANG Zheng-yuan, CHEN Gang, YANG Guo-yu. Vacuum microelectronic pressure sensor[J]. Editorial Office of Optics and Precision Engineering, 2004,(6): 603-607
温志渝, 温中泉, 徐世六, 刘玉奎, 张正元, 陈刚, 杨国渝. 真空微电子压力传感器的研制[J]. 光学精密工程, 2004,(6): 603-607 DOI：

WEN Zhi-yu, WEN Zhong-quan, XU Shi-liu, LIU Yu-kui, ZHANG Zheng-yuan, CHEN Gang, YANG Guo-yu. Vacuum microelectronic pressure sensor[J]. Editorial Office of Optics and Precision Engineering, 2004,(6): 603-607 DOI：

摘要

提出了一种带过载保护功能的真空微电子压力传感器.对传感器的压力敏感膜尺寸、阴阳极间距等结构参数进行了分析计算;针对过载保护的问题

在结构上设计了过载保护环

实现了真空微电子压力传感器的过载自保护功能.采用硅的干、湿法结合的腐蚀、氧化锐化和真空键合等工艺技术

成功地研制出传感器实验样品.对传感器实验样品的参数进行了测试分析

其场致发射阴极锥尖阵列密度达24000个/mm

起始发射电压为0.5～1V

反向电压≥25V

当正向电压为5V时

单尖发射电流为0.2nA

压力灵敏度为0.1μA/KPa.

Abstract

A vacuum micro-electronics pressure sensor with the function of overloading protection is brought forward. The analysis and calculation on some structure parameters of the sensor have been done

such as the dimension of pressure sensitive film

the space length between anode and cathode and so on. As to overloading protection

there is a protection ring. Combining of silicon dry corrosion

wet corrosion

oxidizing sharpening and vacuum bonding techniques

a novel vacuum microelectronic pressure senor was developed. Then

a series of parameters of this sensor has been analized and tested. As a result

the density of field emission tip array reaches 24 000 units per mm

the start emission voltage is between 0.5 V to 1 V

the reverse voltage is over 25 V.When the positive voltage is 5 V

the unicuspid emission current is 0.2 nA

pressure sensitivity is 0.1 μA/KPa.

关键词

Keywords

references

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温志渝,何清义,江永清,等.真空微电子触觉传感器场致发射锥尖阵列的实验研究[J] .重庆大学学报,1998,21(4):12-16.WEN ZH Y,HE Q Y,JIANG Y Q et al. Study of vacuum micro electronic field emission tactile sensor[J] .Journal of Chongqing University,1998,21(4):12-16.(in Chinese)

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