MEMS directly modulating wideband IR thermal source
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MEMS directly modulating wideband IR thermal source
Optics and Precision EngineeringVol. 13, Issue 2, Pages: 144-150(2005)
作者机构:
复旦大学 微电子学系, 上海 200433
作者简介:
基金信息:
DOI:
CLC:TN212
Received:14 February 2005,
Revised:30 March 2005,
Published Online:30 April 2005,
Published:30 April 2005
稿件说明:
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JI Xin-ming, WU Fei-die, WANG Jian-ye, et al. MEMS directly modulating wideband IR thermal source[J]. Optics and precision engineering, 2005, 13(2): 144-150.
DOI:
JI Xin-ming, WU Fei-die, WANG Jian-ye, et al. MEMS directly modulating wideband IR thermal source[J]. Optics and precision engineering, 2005, 13(2): 144-150.DOI:
MEMS directly modulating wideband IR thermal source
A mid-IR thermal source based on electrical heating of platinum film is studied. The IR source with an effectively emitting area diameter of 1.6 mm is obtained from heated platinum thin film resistors that deposit on a Si
3
N
4
/SiO
2
membrane. It can emit wideband infrared light with a peak wavelength of
λ
=2.62 μm at 1 106 K and adapt to direct modulation with variable voltage. Appropriate heat transfer makes it possible to reach a modulation frequency as high as 50 Hz. Such specifications meet the requirements of various IR gas sensors
and it can be regarded as a new thermal IR source to be used in NDIR (non-dispersive infrared) gas analyzer.
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Keywords
references
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