Design and measurement of RF-MEMS CPW on HRS

LIU Ze-wen; XUAN Yun; LEI Xiao-feng; LI Zhi-jian; LIU Li-tian

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Design and measurement of RF-MEMS CPW on HRS

更新时间：2020-08-12

- Design and measurement of RF-MEMS CPW on HRS
- Optics and Precision Engineering Vol. 13, Issue 2, Pages: 158-164(2005)
- 作者机构：
  
  清华大学微电子学研究所北京,100084
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN402
- Received：04 February 2005，
  
  Revised：01 April 2005，
  
  Published Online：30 April 2005，
  
  Published：30 April 2005
- 稿件说明：
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LIU Ze-wen, XUAN Yun, LEI Xiao-feng, et al. Design and measurement of RF-MEMS CPW on HRS[J]. Optics and precision engineering, 2005, 13(2): 158-164.
DOI：

LIU Ze-wen, XUAN Yun, LEI Xiao-feng, et al. Design and measurement of RF-MEMS CPW on HRS[J]. Optics and precision engineering, 2005, 13(2): 158-164. DOI：

摘要

设计并实现了基于高阻硅RF-MEMS(射频-微机电系统)共面波导传输线(CWP)

并测量和分析了不同偏压下的特征阻抗值。利用部分电容法和保角变换法得到的分析公式确定了特征阻抗为50 Ω的共面波导的几何结构尺寸

采用MEMS准平面加工工艺在高阻硅衬底上实现了2.5 μm厚的金共面波导结构。在施加不同直流偏压的情况下对所设计的共面波导进行了

参数测量。计算了Winkel多项式中所有系数的具体表达式

运用该多项式获得了共面波导的特征阻抗

并与传统的特征阻抗提取方法进行了结果比较。实验数据表明

在中心信号线上施加的直流偏压对

参数的影响很小

而对共面波导特征阻抗的影响较为明显

当施加的直流偏压从0 V变为38 V时

特征阻抗的实部会增加

变化幅度小于1.2 Ω

虚部会减小

变化幅度小于0.8 Ω。

Abstract

This paper presents the design of RF-MEMS(radio-frequency micro-electro-mechanical system) coplanar-waveguide (CPW) on high resistivity silicon (HRS) and its measurement under different bias-voltage are presented. The dimension of the CPW is designed with partial-capacitance method and conformal mapping method. The designed CPW transmission line is realized on 3 inches HRS wafer with a resistivity of 1 000 Ω·cm. The substrate and metal layer are insulated by 0.8 μm silicon dioxide layer formed by oxygenation. 2.5 μm thick electroplated gold is selected as the material of metal layer. The width of the central signal line is 196 μm and the gap between signal line and ground line is 120 μm. The S-parameters measurement of the designed CPW is performed with 0 V and 38 V bias on the central signal line by HP 8722ES network analyzer. The characteristic impedance of designed CPW is extracted using Winkel’s method

and the necessary specific polynomial is also given. The extracted parameters show that the influence of bias-voltage on characteristic impedance is observable. When the bias-voltage on central signal line is transformed from 0 V to 38 V

the change of the real part of the characteristic impedance is about 1.2 Ω

while the image part change is about 0.8 Ω.

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references

. 周兆英,叶雄英,崔天宏等. 微米纳米技术及微型机电系统[J]. 光学精密工程,1998,6(1):1-7. ZHOU Z Y,YE X Y,CUI T H,et al.Microtechnology/Nanotechnology and MEMS .Optics and Precision Engineering,1998,6(1):1-7.

. RASTOGI A K,HARDIKAR S. Characteristics of CPW with thick metal coating . Infrared and Millimeter Waves, 2002. Conference Digest, Twenty Seventh International Conference,2002: 345-346.

. 格普塔 K C,加格 R,查德哈 R.微波电路的计算机辅助设计 . 北京:科技出版社,1986:43-45. GEPUTA K C, GAGE R, CHADEHA R. Computer aided design of microwave circuit .Beijing:Science and Technology Press, 1986: 43-45.(in Chinese)

. MILANOVIC V, GAITAN M, BOWEN E D, et al. Micromachined microwave transmission lines in CMOS technology[J]. IEEE Transactions on Microwave Theory and Techniques, 1997,45(5): 630-635.

. 李炜,石艳玲. 低阻硅基厚膜聚酰亚胺上共面波导的损耗特性[J]. 固体电子学研究与进展,2003,23(3):306-310. LI W, SHI Y L. Loss performance of CPW with thick polyimide on low-resistivity Si[J]. Research and Progress of SSE,2003,23(3):306-310.(in Chinese)

. REYES A C,EL-GHAZALY S M.Silicon as a microwave substrate, microwave symposium digest[J].IEEE MTT-S International, 1994,3:1759-1762.

. REBEIZ G M. RF MEMS: theory, design, and technology[M]. John Wiley and Sons, 366-367.

. HUANG Y. Calculation of microwave parameters of CPW with a buffer layer . 2002 3rd International Conference on Microwave and Millimeter Wave Technology Proceedings,2002:875-878.

. CHUNG H, CHANG W S C. Modeling and optimization of traveling-wave LiNbO3 interferometric modulators[J]. IEEE Journal of Quantum Electronics, 1991.27(3):608-617.

. WINKEL T M,DUTTA L S,GRABINSKI H.An accurate determination of the characteristic impedance of lossy lines on chips based on high frequency S-parameter measurement . Multi-Chip Module Conference, 1996. MCMC-96, Proceedings, 1996 IEEE, 1996: 190-195.

. EISENSTADT W R,Eo Y. S-parameter based IC interconnect transmission line characterization[J]. IEEE Transactions on Components, Hybrid, Manufacturing Technology, 1992,15: 483-490.

. WILLIAMS D F,MARKS R B.Accurate transmission line characterization[J]. IEEE Microwave and Guided Wave Letters,1993,3(8):247-24.

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