Theoretical analysis of 980 nm high power vertical external cavity surface emitting semiconductor laser (VECSEL)

HE Chun-feng; LU Guo-guang; SHAN Xiao-nan; QIN Li; YAN Chang-ling; NING Yong-qiang; LI Te

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Theoretical analysis of 980 nm high power vertical external cavity surface emitting semiconductor laser (VECSEL)

更新时间：2020-08-12

- Theoretical analysis of 980 nm high power vertical external cavity surface emitting semiconductor laser (VECSEL)
- Optics and Precision Engineering Vol. 13, Issue 3, Pages: 247-252(2005)
- 作者机构：
  
  1. 长春理工大学高功率半导体激光重点实验室,吉林长春,130022
  2. 中国科学院长春光学精密机械与物理研究所, 吉林长春 130033
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN248.4
- Received：10 March 2005，
  
  Revised：14 April 2005，
  
  Published Online：30 June 2005，
  
  Published：30 June 2005
- 稿件说明：
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HE Chun-feng, LU Guo-guang, SHAN Xiao-nan, et al. Theoretical analysis of 980 nm high power vertical external cavity surface emitting semiconductor laser (VECSEL)[J]. Optics and precision engineering, 2005, 13(3): 247-252.
DOI：

HE Chun-feng, LU Guo-guang, SHAN Xiao-nan, et al. Theoretical analysis of 980 nm high power vertical external cavity surface emitting semiconductor laser (VECSEL)[J]. Optics and precision engineering, 2005, 13(3): 247-252. DOI：

摘要

利用周期谐振增益结构设计了以InGaAs/GaAsP/AlGaAs为有源区的980 nm二极管泵浦垂直外腔面发射半导体激光器。根据理论模型计算了纵模限制因子、阈值增益、光增益、输出功率等特征参数

优化了激光器特征参数并设计了OPS-VECSEL结构。理论计算表明

LD泵浦的垂直外腔面发射激光器的输出功率可大于1.0 W。

Abstract

By using period resonance gain structure

a laser diode (LD) pumped 980 nm vertical external-cavity surface-emitting laser (VECSEL) with active region of InGaAs/GaAsP/AlGaAs system was developed. The longitudinal confinement factor

threshold gain

optical gain and output power were calculated. The characteristic parameters of VECSEL were optimized

and the structure of VECSEL was designed. The results show that the output power of a LD-pumped VECSEL can be larger than 1.0 W based on the theoretical calculations.

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references

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