Multilayer optics for the EUV and soft X-rays

Torsten Feigl; Sergiy Yulin; Nicolas Benoit; Norbert Kaiser

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Multilayer optics for the EUV and soft X-rays

更新时间：2020-08-12

- Multilayer optics for the EUV and soft X-rays
- Optics and Precision Engineering Vol. 13, Issue 4, Pages: 421-429(2005)
- 作者机构：
  
  Fraunhofer Institut für Angewandte Optik und Feinmechanik, Albert-Einstein-Str. 7,- Jena D,Germany,07745
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：06 June 2005，
  
  Revised：16 June 2005，
  
  Published Online：30 August 2005，
  
  Published：30 August 2005
- 稿件说明：
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Torsten Feigl, Sergiy Yulin, Nicolas Benoit, et al. Multilayer optics for the EUV and soft X-rays[J]. Optics and precision engineering, 2005, 13(4): 421-429.
DOI：

Torsten Feigl, Sergiy Yulin, Nicolas Benoit, et al. Multilayer optics for the EUV and soft X-rays[J]. Optics and precision engineering, 2005, 13(4): 421-429. DOI：

摘要

The demand to enhance the optical resolution

to structure and observe ever smaller details

has pushed the way towards the EUV and soft X-rays. Induced mainly by the production of more powerful electronic circuits with the aid of projection lithography

optics developments in recent years can be characterized by the use of electromagnetic radiation with smaller wavelength. The good prospects of the EUV and soft X-rays for next generation lithography systems (

=13.5 nm)

microscopy in the "water window" (

=2.3~4.4 nm)

astronomy (

=5~31 nm)

spectroscopy

plasma diagnostics and EUV/soft X-ray laser research have led to considerable progress in the development of different multilayer optics. Since optical systems in the EUV/soft X-ray spectral region consist of several mirror elements a maximum reflectivity of each multilayer is essential for a high throughput. This paper covers recent results of the enhanced spectral behavior of Mo/Si

Cr/Sc and Sc/Si multilayer optics.

Abstract

The demand to enhance the optical resolution

to structure and observe ever smaller details

has pushed the way towards the EUV and soft X-rays. Induced mainly by the production of more powerful electronic circuits with the aid of projection lithography

=13.5 nm)

microscopy in the "water window" (

=2.3~4.4 nm)

astronomy (

=5~31 nm)

spectroscopy

Cr/Sc and Sc/Si multilayer optics.

关键词

Keywords

references

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