1 060 nm wavelength high power diode array module

YAO Shun; TAO Ge-tao; LU Guo-guang; LIU Yun; YAO Di; WANG Li-jun

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1 060 nm wavelength high power diode array module

更新时间：2020-08-12

- 1 060 nm wavelength high power diode array module
- Optics and Precision Engineering Vol. 14, Issue 1, Pages: 8-11(2006)
- 作者机构：
  
  1. 中国科学院研究生院,北京 100039
  2. 中国科学院长春光学精密机械与物理研究所激发态物理实验室, 吉林长春130033
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN248.4
- Received：22 October 2005，
  
  Revised：12 November 2005，
  
  Published Online：20 February 2006，
  
  Published：20 February 2006
- 稿件说明：
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YAO Shun, TAO Ge-tao, LU Guo-guang, et al. 1 060 nm wavelength high power diode array module[J]. Optics and precision engineering, 2006, 14(1): 8-11.
DOI：

YAO Shun, TAO Ge-tao, LU Guo-guang, et al. 1 060 nm wavelength high power diode array module[J]. Optics and precision engineering, 2006, 14(1): 8-11. DOI：

摘要

利用InGaAs/InGaAsP应变量子阱外延层材料制作出高功率半导体激光列阵模块。激光芯片宽1 cm

腔长1200 μm

条宽200 μm

填充密度为50%

前后腔面光学膜分别为单层Al

和Al

/5(HfO

/SiO

)/HfO

室温连续输出功率达到68.5 W

器件光谱中心波长为1 059 nm

光谱宽度(FWHM)为9 nm。

Abstract

InGaAs/GaAsP strained-compensated single-quantum well structure with an emission wavelength of 1 060 nm was grown. The laser bars with a stripe width of 200 μm and a filling factor of 50% was fabricated. The back HR coating is Al

/5(HfO

/SiO

)/HfO

and the front AR coating is Al

.The module’s CW output power reaches to 68.5 W at a current of 80 A. The threshold current is 10 A and the central wavelength is 1 059 nm with a FWHM of 9 nm.

关键词

Keywords

references

. YUDA M,SASAKI T,TEMMYO J,et al. High-power highly reliable 1.02~1.06μm InGaAs strained-quantum-well laser diodes [J].IEEE Quantum Electronics,2003,39(12):1515-1519.

. YUDA M,TEMMYO J,SASAKI T, et al. High-power highly reliable 1.06 μm InGaAs strained-quantum-well laser diodes by low-temperature growth of InGaAs well layers[J].Electronics Letters,2003,39(8):661-662.

. LICHTENSTEIN N,MANZ Y,MAURON P,et al.325 Watt from 1cm wide 9xx laser bars for DPSSL- and FL-applications [J].SPIE,2005,5711:1-11.

. WATERS R G,YORK P K,BEERNINK K J,et al. Viable strained-layer laser at λ=1 100 nm[J].J.Appl.Phys.lett.,1990,67:1132-1143.

. SCHLENKER D,MIYAMOTO T,KOYAMA Z,et al. Growth of highly strained GaInAs/GaAs quantum wells for 1.2 μm wavelength lasers[J].Cryst.Growth,2000,209:27-36.

. HOFMANN L,KLEHR A,BUGGE F,et al. 180 mW DBR lasers with first-order grating in GaAs emitting at 1062nm[J]. Electronics Letters, 2000,36(6):534-536.

. HAYAKAWA T,AKINAGA F,KUNIYASU T,et al. Highly reliable and high power operation of 1.05μm InGaAs/GaAsP strained-compensated single-quantum well laser diodes for pumping Tm-doped fiber amplifier .Optical Fiber Conf, 2002,Anaheim,CA,ThN1.

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