Measurement of piezoelectric properties of PZT films by laser Doppler technique

XU Xiao-hui; LU Jian; ZHU Long-yang; CHU Jia-ru

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Measurement of piezoelectric properties of PZT films by laser Doppler technique

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- Measurement of piezoelectric properties of PZT films by laser Doppler technique
- Optics and Precision Engineering Vol. 13, Issue 6, Pages: 658-663(2005)
- 作者机构：
  
  中国科学技术大学精密机械与精密仪器系,安徽合肥,230027
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN247
- Received：09 August 2005，
  
  Revised：01 September 2005，
  
  Published Online：30 December 2005，
  
  Published：30 December 2005
- 稿件说明：
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XU Xiao-hui, LU Jian, ZHU Long-yang, et al. Measurement of piezoelectric properties of PZT films by laser Doppler technique[J]. Optics and precision engineering, 2005, 13(6): 658-663.
DOI：

XU Xiao-hui, LU Jian, ZHU Long-yang, et al. Measurement of piezoelectric properties of PZT films by laser Doppler technique[J]. Optics and precision engineering, 2005, 13(6): 658-663. DOI：

摘要

应用基于激光多普勒技术的微小形变分析方法

并引入数字锁相技术

成功实现了PZT(Pb(Zr

Ti)O

)铁电薄膜的压电性能测试。对商用压电陶瓷在小信号激励下的压电性能测试表明

数字锁相技术的引入能有效抑制系统噪声

并提高激光多普勒系统的位移检测分辨率

使其达到皮米量级。此外

研究了用溶胶-凝胶技术和溶胶-电雾化技术制备得到的PZT薄膜的电压-位移曲线和压电位移"蝴蝶线"

实验结果表明:在5 V直流偏置下测得两种方法制备得到的PZT薄膜的d

压电系数分别为218.7 pC/N和215.8 pC/N

相应的标准偏差分别为12.7和28.6。

Abstract

Laser Doppler technique was used to measure the piezoelectric properties of PZT(Pb(Zr

Ti)O

) thin films. The measurement of piezoelectric properties on commercial PZT bulk indicated that the introduction of lock-in technique

which offered excellent noise rejection

raised the displacement resolution up to picometer order. Then experiments were performed on PZT films derived by sol-gel method and Electrical Spray Deposition (ESD) method. The obtained results show that the piezoelectric coefficients (d

) of the two films are 218.7 pC/N and 215.8 pC/N respectively

with 5 V dc bias

and the corresponding standard deviations are 12.7 and 28.6.

关键词

Keywords

references

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