Experimental and theoretical study on laser cleaning Al2O3 particle on silicon wafer surface
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Experimental and theoretical study on laser cleaning Al2O3 particle on silicon wafer surface
Optics and Precision EngineeringVol. 14, Issue 5, Pages: 764-770(2006)
作者机构:
1. 大连理工大学 精密与特种加工教育部重点实验室,辽宁 大连 116024
2. 大连理工大学 三束材料改性国家重点实验室,辽宁 大连,116024
作者简介:
基金信息:
DOI:
CLC:TN249
Received:18 January 2006,
Revised:13 June 2006,
Published Online:30 October 2006,
Published:30 October 2006
稿件说明:
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WU Dong-jiang, XU Yuan, WANG Xu-yue, et al. Experimental and theoretical study on laser cleaning Al2O3 particle on silicon wafer surface[J]. Optics and precision engineering, 2006, 14(5): 764-770.
DOI:
WU Dong-jiang, XU Yuan, WANG Xu-yue, et al. Experimental and theoretical study on laser cleaning Al2O3 particle on silicon wafer surface[J]. Optics and precision engineering, 2006, 14(5): 764-770.DOI:
Experimental and theoretical study on laser cleaning Al2O3 particle on silicon wafer surface
particles which are the main component of the silicon wafer lap-polishing solution commonly used in industry nowadays was studied by experiments combined with theoretical analysis. The simple heat-conduction model was built and the temperature field on silicon wafer surface during laser cleaning was simulated using the finite element method. The adhesion force between the particle and the substrate and cleaning force acting on the particles were calculated
and the theoretical threshold of laser cleaning 1 μm Al
2
O
3
is 60mJ·cm
-2
. Under the guidance of the mechanism analysis
a serial of laser dry cleaning experiments were carried out to study the dependence of laser cleaning efficiency on laser fluence
numbers of pulse
and laser beam incidence angle on silicon wafer surface using 248 nm
30 ns
KrF excimer laser
Which confirmed the clean model as well as the effect of the field enhancement on laser cleaning.