Study on uniformity of micro-electroformed device

DU Li-qun; LIU Hai-jun; QIN Jiang; ZHU Shen-miao

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Study on uniformity of micro-electroformed device

更新时间：2020-08-12

- Study on uniformity of micro-electroformed device
- Optics and Precision Engineering Vol. 15, Issue 1, Pages: 69-75(2007)
- 作者机构：
  
  1. 大连理工大学辽宁省微纳米技术及系统重点实验室,辽宁大连,116023
  2. 大连理工大学教育部精密与特种加工技术重点实验室,辽宁大连,116023
- 作者简介：
- 基金信息：
- DOI：
  CLC： TG249.9;TN405
- Received：20 May 2006，
  
  Revised：08 October 2006，
  
  Published Online：30 January 2007，
  
  Published：30 January 2007
- 稿件说明：
移动端阅览
DU Li-qun, LIU Hai-jun, QIN Jiang, et al. Study on uniformity of micro-electroformed device[J]. Optics and precision engineering, 2007, 15(1): 69-75.
DOI：

DU Li-qun, LIU Hai-jun, QIN Jiang, et al. Study on uniformity of micro-electroformed device[J]. Optics and precision engineering, 2007, 15(1): 69-75. DOI：

摘要

理论分析了负脉冲电流对铸层的修饰作用

采用正负间断脉冲电流和正间断负连续脉冲电流进行了相应的微电铸的实验研究。实验采用的微电铸器件是特征宽度为90 μm的微流控芯片的金属模具。微电铸实验主要包括三个步骤:制作SU-8胶胶模

微电铸和去除SU-8胶。为了对实验结果进行对比分析

两组实验的工作时间和电流强度均采用240 min和2.5 A/dm

。将正负脉冲电流微电铸与正脉冲电流微电铸的实验结果进行了对比分析。研究结果表明

正负间断脉冲电流能够获得较好的器件铸层均匀性。由于在负向脉冲的间断时间内

铸层表面附近的浓度极差得以改变

因此正负间断脉冲电流微电铸的铸层均匀性优于正间断负连续脉冲电流微电铸。实验结果与理论分析结果相一致。

Abstract

A theoretical investigation was presented to explain the effect of pulse-reverse current on the uniformity in micro-electroforming

and the micro-electroforming experiments of two different pulse-reverse currents with gaps were carried out .The two pulse-reverse currents were pulse-reverse current with gaps and pulse-reverse current without gaps in negative current

respectively. The micro-device in the experiments was the mold of micro-fluidic chip with feature width of 90 μm. All experiments consisted of three steps: making of SU-8 resist mold

micro-electroforming and removing of SU-8 resist. With the same working time and average current density

240 min and 2.5 A/dm

comparison was carried out between the pulse-reverse current experiments and the pulse current experiment. In contrast with the data of pulse-current micro-electroforming

better uniformity was obtained in experiments using the pulse-reverse currents. Because concentration difference over the micro pattern was improved during off-time of the negative current

surface quality was better in the experiment using the pulse-reverse current with gaps. Therefore

the results are consistent with the theoretical investigation.

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Keywords

references

. 梁静秋,姚劲松. LIGA技术基础研究[J]. 光学精密工程,2000,8(1):39-41. LIANG J Q, YAO J S. The study of LIGA technology[J].Opt. Precision Eng., 2000,8(1):39-41. (in Chinese)

. 张永华,丁桂甫, 彭军,等. LIGA 相关技术及应用 . 传感器技术, 2003, 22(3): 60-64. ZHANG Y H, DING G F, PENG J, et al.. Related technologies and applications of LIGA[J]. J. Transd. Technol., 2003, 22(3): 60-64. (in Chinese)

. YEH Y M, CHEN CH S, TSAI M H, et al.. Effect of pulse reverse current on microstructure and properties of electroformed nickel-iron mold insert[J]. Jap. J.Appl. Phys., 2005, 44(2):1086-1090.

. SANKAR P R, KHATTAK B Q, JAIN A K, et al.. Electroforming of copper by periodic reversal process[J]. Surf. Eng., 2005, 21(3): 204-208.

. WONG K P, CHAN K C, YUE T M. Modeling the effect of complex waveform on surface finishing in pulse current electroforming of nickel[J]. Surf.Coat.Technol., 2000,135(1): 91-97.

. WONG K P, CHAN K C, YUE T M. Modeling of electrocrystallization for pulse current electroforming of nickel[J]. Appl. Surf. Sci., 2001,178(2):178-189.

. 邝生鲁, 陈芬儿, 梁启勇. 应用电化学[M]. 武汉:华中理工大学出版社, 1994. KUANG SH L, CHEN F E, LIANG Q Y. Applied electrochemistry[M]. Wuhan:Hua Zhong University of Technology Press,1994. (in Chinese)

. QU N S, CHAN K C, ZHU D. Surface roughening in pulse current and pulse reverse current electroforming of nickel[J]. Surf. Coat. Technol., 1997,91(3): 220-240.

. 张立国,陈迪,杨帆,等. SU-8胶光刻工艺研究[J]. 光学精密工程,2002,10(3):267-269. ZHANG L G, CHEN D, YANG F, et al.. Research on SU-8 resist photolithography process[J]. Opt. and Precision Eng.,2002,10(3):267-269.(in Chinese)

. 张允诚, 胡如南,向荣.电镀手册[M]. 北京:国防工业出版社,1997. ZHANG Y CH,HU R N,XIANG R. Electroplating manual[M].Beijing: National Defence Industry Press,1997.(in Chinese)

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