Uniformity study of Ni Microstructure Deposited by Through-Mask Plating

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Uniformity study of Ni Microstructure Deposited by Through-Mask Plating

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- Uniformity study of Ni Microstructure Deposited by Through-Mask Plating
- Optics and Precision Engineering Vol. 16, Issue 3, Pages: 452-458(2008)
- 作者机构：
  
  长春光学精密机械与物理研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：09 October 2007，
  
  Revised：31 October 2007，
  
  Published Online：22 March 2008，
  
  Published：22 March 2008
- 稿件说明：
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李加东,吴一辉,张平,宣明,刘永顺. 掩模电镀镍微结构均匀性的研究[J]. 光学精密工程, 2008,16(3):452-458

Uniformity study of Ni Microstructure Deposited by Through-Mask Plating[J]. Optics and precision engineering, 2008, 16(3): 452-458.
李加东,吴一辉,张平,宣明,刘永顺. 掩模电镀镍微结构均匀性的研究[J]. 光学精密工程, 2008,16(3):452-458 DOI：

Uniformity study of Ni Microstructure Deposited by Through-Mask Plating[J]. Optics and precision engineering, 2008, 16(3): 452-458. DOI：

摘要

在给定的电镀液组分下，对掩膜电镀微结构的厚度均匀性及镀层横截面轮廓进行了研究。讨论了影响微结构镀层厚度均匀性的主要因素。分析了镀层横截面轮廓随电流密度的改变而变化的原因。电镀液中无添加剂时，提出镀层均匀性与阴极极化度直接相关；电镀液中有添加剂时，本实验所使用添加剂所具有的并存吸附状态是影响镀层均匀性的主要因素。通过实验得到可获得良好均匀性镀层的电镀参数：i=6±2 mA/cm2，T=25°C。

Abstract

This paper investigates the thickness uniformity and the cross-sectional profiles of electroplated individual nickel microstructures as a function of electroplating conditions. Factors which influence the thickness uniformity of microstructures were discussed. It was found that the thickness uniformity and the cross-sectional profiles of microstructures could be controlled by varying the process conditions. When no additives in electroplating solution

the polarizability were applied to explain the changes in the thickness uniformity and the cross-sectional profiles of electroplated individual nickel microstructures; with additive

coexisting adsorption states of additive in electroplating is believed to be responsible for the change in the thickness uniformity and the cross-sectional profiles of electroplated individual nickel microstructures. At last

a uniform thickness distribution and microstructures with flat profiles could be obtained at optimal plating conditions of 6±2mA/cm2 and 25°C.

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