Fabrication process analysis for nano-positioning stage based on silicon bulk micromachining

doi:null

您当前的位置：

首页 >

文章列表页 >

Fabrication process analysis for nano-positioning stage based on silicon bulk micromachining

Article | 更新时间：2020-08-12

- Fabrication process analysis for nano-positioning stage based on silicon bulk micromachining
- Optics and Precision Engineering Vol. 16, Issue 4, Pages: 636-641(2008)
- 作者机构：
  
  中国科学院上海微系统与信息技术研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：29 October 2007，
  
  Revised：28 November 2007，
  
  Published Online：22 April 2008，
  
  Published：22 April 2008
- 稿件说明：
移动端阅览
王家涛. 基于体硅工艺的定位平台制作工艺分析研究[J]. 光学精密工程, 2008,16(4):636-641

Fabrication process analysis for nano-positioning stage based on silicon bulk micromachining[J]. Optics and precision engineering, 2008, 16(4): 636-641.
王家涛. 基于体硅工艺的定位平台制作工艺分析研究[J]. 光学精密工程, 2008,16(4):636-641 DOI：

Fabrication process analysis for nano-positioning stage based on silicon bulk micromachining[J]. Optics and precision engineering, 2008, 16(4): 636-641. DOI：

摘要

介绍了一种基于体硅工艺的大尺寸、大深宽比的纳米级定位平台的制作工艺。对定位平台的制作中的关键工艺进行的分析，总结了导致器件失效的主要原因，探讨了减少失效的方法。同时介绍了一种可行的面内侧面压阻的加工方法。通过对深度反应离子刻蚀（DRIE）工艺参数的调整成功了刻蚀出了大尺寸、大深宽比的结构释放窗口，释放了最小线宽为2.5μm，厚度为50微米的梳齿结构。研制了一种良好性能的集成位移检测的纳米级定位平台。

Abstract

The fabrication process of a nano-positioning stage with a high aspect ratio and big dimension is presented in this paper

which is based on bulk micromachining. The effect of deep reactive ion etching and the technology of protecting the backside for the etching silicon on the structure are analyzed. Some factors causing nano-position stage failure are identified

and advices are provided for avoidance of these failure. Moreover

an effective technique of fabricating vertical sidewall piezoresistor in plane is proposed and used to fabricate piezoresistor in this nano-positioning stage. With adjusting DRIE parameters method a high aspect ratio and big dimension backside windows for releasing the structure and electrostatics comb structure of 2.5μm wide and 50μm thickness were successfully released. A high aspect ratio nano-positioning stage integrating displacement sensor has been developed.

关键词

Keywords

references

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Characteristic research of the integrating positioning XY-Stage based on bulk machining

Related Author

No data

Related Institution

中国科学院上海微系统与信息技术研究所

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176855 Email：gxjmgc@ciomp.ac.cn
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰