XPS study of Ge1-x Cx thin film prepared by RLVIP technique

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XPS study of Ge1-x Cx thin film prepared by RLVIP technique

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- XPS study of Ge1-x Cx thin film prepared by RLVIP technique
- Optics and Precision Engineering Vol. 16, Issue 4, Pages: 565-569(2008)
- 作者机构：
  
  长春光学精密机械与物理研究所
- 作者简介：
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- DOI：
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- Received：09 August 2007，
  
  Revised：24 September 2007，
  
  Published Online：22 April 2008，
  
  Published：22 April 2008
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王彤彤,高劲松,宋琦,王笑夷,陈红,郑宣鸣,申振峰. RLVIP制备Ge1－xCx薄膜的X射线光电子能谱研究[J]. 光学精密工程, 2008,16(4):565-569

XPS study of Ge1-x Cx thin film prepared by RLVIP technique[J]. Optics and precision engineering, 2008, 16(4): 565-569.
王彤彤,高劲松,宋琦,王笑夷,陈红,郑宣鸣,申振峰. RLVIP制备Ge1－xCx薄膜的X射线光电子能谱研究[J]. 光学精密工程, 2008,16(4):565-569 DOI：

XPS study of Ge1-x Cx thin film prepared by RLVIP technique[J]. Optics and precision engineering, 2008, 16(4): 565-569. DOI：

摘要

应用低压反应离子镀（Reactive Low Voltage Ion Plating：RLVIP）在Ge基底上沉积了Ge1-xCx薄膜。制备过程中，低压等离子源作为辅助等离子源，Ge作为蒸发材料，CH4作为反应气体，在相同的条件下以不同沉积速率制备了C含量( x )从0.23到0.78的Ge1-xCx薄膜。X射线衍射测试表明制备的Ge1-xCx薄膜为无定形结构。通过X射线光电子能谱研究了不同C含量下Ge1-xCx薄膜的化学键合变化。测试结果表明当 x > 0.78时，成键为C-H键；当x在0.53至0.62时，成键为C-C键；当x < 0.47时，成键为Ge-C键。

Abstract

Ge1-xCx thin films are deposited on germanium substrate by Reaction Low Voltage Ion Plating (RLVIP) technique. Germanium is evaporated by e-gun

and methane is ionized as reactive gas. Ge1-xCx thin films

with carbon content ( x ) raging from 0.23 to 0.78 at different depositing rate are fabricated at the same condition. X-ray Diffraction (XRD) tests indicate the films are amorphous. Chemical bonding properties are systematically investigated by X-ray photoelectron spectroscopy (XPS). It is observed that chemical bonding with different hybridization which depends on C concentrations. As x higher than 0.78

carbon bonds to hydrogen; x is in the range of 0.53 to 0.62

bonding property is carbon-carbon tetrahedrally and/or graphitic; x is lower than 0.47

the component can be related to Ge-C bond.

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