In order to achieve high efficiency and low damaged layer during sapphire crystal lapping process
experimental research on rougness
lapping uniformity and sub-surface damaged layer were studied in this paper. Sapphire with (0001) orientation was lapped by 280 mesh boron carbide abrasive grits
firstly
effects of lapping times on the material remove rate and surface roughness were investigated
then micro-surface uniformity was also presented by using WYKO equipment. Finally
Nano-indentation test was applied to measure the depth of damaged layer according to the hardness or modulus variance. Experimental results show that sapphire crystal with average roughness Ra0.523μm and Rt<6.0μm
depth of sub-surface damaged layer not more than 1μm
could be achieved by dual-lapping abrasive machining with 280 mesh boron carbide grits in 120 minutes.
Laser-induced plasma-assisted ablation of sapphire microstructures and their wettability
Experimental study on rolling microchannel and nanochannel in chip materials by diamond
Research progress of multilayer optical elements in extreme ultraviolet and vacuum ultraviolet
Experimental study on rolling and brittle fracture to single crystal silicon and sapphire by diamond cutter wheel
Comparison of grinding characteristics of different crystal surfaces for sapphire
Related Author
JIANG Feng
CUI Changcai
HUANG Guoqin
CHEN Jinhong
WEN Qiuling
WANG Xiaoguang
ZHOU Cong
CHEN Zhaojie
Related Institution
Institute of Manufacturing Engineering, Huaqiao University
School of Mechanical and Automotive Engineering, South China University of Technology
Guangdong University of Science and Technology
Institute of Precision Optical Engineering, MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai Frontiers Science Center of Digital Optics, Shanghai Professional Technical Service Platform for Full-Spectrum and High-Performance Optical Thin Film Devices and Applications, School of Physics Science and Engineering, Tongji University
College of Mechanical and Automotive Engineering, South China University of Technology