Application of ultrasonic technology to wet etching of silicon

ZENG Yi-bo; WANG Ling-yun; GU Dan-dan; SUN Dao-heng

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Application of ultrasonic technology to wet etching of silicon

Article | 更新时间：2020-08-12

- Application of ultrasonic technology to wet etching of silicon
- Optics and Precision Engineering Vol. 17, Issue 1, Pages: 166-171(2009)
- 作者机构：
  
  1. 厦门大学机电工程系,福建厦门 361005
  2. 厦门大学萨本栋微机电研究中心,福建厦门,361005
- 作者简介：
- 基金信息：
- DOI：
  CLC： TB559;TN305.2
- Received：26 March 2008，
  
  Revised：16 June 2008，
  
  Published：2009
- 稿件说明：
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曾毅波, 王凌云, 谷丹丹, 孙道恒. 超声技术在硅湿法腐蚀中的应用[J]. 光学精密工程, 2009,17(1): 166-171

ZENG Yi-bo, WANG Ling-yun, GU Dan-dan, SUN Dao-heng. Application of ultrasonic technology to wet etching of silicon[J]. Editorial Office of Optics and Precision Engineering, 2009,17(1): 166-171
曾毅波, 王凌云, 谷丹丹, 孙道恒. 超声技术在硅湿法腐蚀中的应用[J]. 光学精密工程, 2009,17(1): 166-171 DOI：

ZENG Yi-bo, WANG Ling-yun, GU Dan-dan, SUN Dao-heng. Application of ultrasonic technology to wet etching of silicon[J]. Editorial Office of Optics and Precision Engineering, 2009,17(1): 166-171 DOI：

摘要

为了获得平滑的硅湿法腐蚀表面

在硅湿法腐蚀中引入超声技术。对超声湿法腐蚀系统进行了改进

以确保腐蚀溶液的顶部和底部温差在0.5 ℃之内。采用60 ℃

10 %质量分数的KOH溶液

在超声频率为59 kHz

超声功率为60~180 W(间隔10 W)条件下对(100)硅片进行湿法腐蚀。最后

运用激光共聚焦扫描显微镜(LSCM)对腐蚀后硅片表面粗糙度进行测量

并探讨超声参数的选择对腐蚀表面质量的影响。实验结果表明:超声功率在120 W时

可以获得平滑的腐蚀表面

表面粗糙度

值为0.020 m。在湿法腐蚀系统中采用超声技术

可以明显改善腐蚀表面质量

在较低温度和较低浓度的KOH溶液中

选择合适的超声参数可获得高品质的腐蚀表面。

Abstract

In order to achieve smooth wet etching surface of silicon

ultrasonic technology is introduced in the wet etching of silicon. By improving the ultrasonic wet etching system

the temperature difference between top and bottom etching solutions can reach 0.5℃. Then

at 60℃(100)

silicon is etched wetlly by KOH solution in mass ratio of 10%

ultrasonic frequency of 59 kHz and ultrasonic power ranging from 60 W to 180 W (every 10 W). Finally

the post-etched surface roughness is measured by Laser Scanning Confocal Microscope (LSCM)

and the effect of ultrasonic parameters on the quality of etching surface is discussed. Experimental results indicate that the smooth etching surface can be obtained in roughness

of 0.02 m at ultrasonic power of 120 W. The quality of etching surface is greatly improved in the ultrasonic wet etching system

also the etching surface of high quality can be obtained with suitable ultrasonic parameters in lower temperature and concentration of KOH solution.

关键词

Keywords

references

温志渝, 温中泉, 徐世六, 等. 真空微电子压力传感器的研制[J]. 光学精密工程, 2004, 12(6): 603-607. WEN ZH Y, WEN ZH Q, XU SH L, et al. Vacuum microelectronic pressure sensor . Opt. Precision Eng., 2004, 12(6): 603-607. (in Chinese)[2] 梁静秋, 侯凤杰. 采用硅V型槽的一维光纤阵列的研制[J]. 光学精密工程, 2007, 15(1): 89-94. LIANG J Q, HOU F J. One-dimension optical fiber array with silicon V-grooves [J]. Opt. Precision Eng., 2007, 15(1): 89-94. (in Chinese)[3] JING C, LI T L, ZHI J L, et al.. Study of anisotropic etching of (1 0 0) Si with ultrasonic agitation [J]. Sensors and Actuators A, 2002, 96: 152-156.[4] CHII R Y, PO Y C, YUANG C C, et al.. Effects of mechanical agitation and surfactant additive on silicon anisotropic etching in alkaline KOH solution [J]. Sensors and Actuators A, 2005, 119: 263-270. [5] THEO B, DAVID J S. AFM study of surface finish improvement by ultrasound in the anisotropic etching of Si <100> in KOH for micromachining applications . Micromech. Microeng., 1997, 7: 338-342.[6] 刘玉岭, 檀柏梅, 张楷亮. 微电子技术工程――材料、工艺与测试[M]. 北京: 电子工业出版社, 2004. LIU Y L, TAN B M, ZHANG K L. Micro-electronic Technology EngineeringMaterial, Process and Testing[M]. Bejing: Publishing House of Electronics Industry, 2004.(in Chinese)[7] 王富生, 谭久彬. 表面微观轮廓高分辨率光学测量方法[J]. 光学精密工程, 2000, 8(4): 309-315. WANG F SH, TAN J B. Methods of high resolution optical measurement for surface profile [J]. Opt. Precision Eng., 2000, 8(4): 309-315. (in Chinese)[8] 曹凤国. 超声加工技术[M]. 北京: 化学工业出版社, 2005. CAO F G. Ultrasonic Machining Technology[M]. Bejing: Chemical industry Press, 2005.(in Chinese)

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