PZT piezoelectric function structure on silicon substrate

WANG Wei; TIAN Li; LIU Xiao-wei; REN Ming-yuan; ZHANG Ying

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PZT piezoelectric function structure on silicon substrate

Article | 更新时间：2020-08-12

- PZT piezoelectric function structure on silicon substrate
- Optics and Precision Engineering Vol. 17, Issue 3, Pages: 583-588(2009)
- 作者机构：
  
  1. 哈尔滨工业大学微电子科学与技术系,黑龙江哈尔滨,150001
  2. 哈尔滨理工大学软件学院,黑龙江哈尔滨,150080
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN384
- Received：26 May 2008，
  
  Revised：10 July 2008，
  
  Published Online：25 March 2009，
  
  Published：25 March 2009
- 稿件说明：
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王蔚, 田丽, 刘晓为, 任明远, 张颖. 硅基PZT压电功能结构[J]. 光学精密工程, 2009,17(3): 583-588

WANG Wei, TIAN Li, LIU Xiao-wei, REN Ming-yuan, ZHANG Ying. PZT piezoelectric function structure on silicon substrate[J]. Editorial Office of Optics and Precision Engineering, 2009,17(3): 583-588
王蔚, 田丽, 刘晓为, 任明远, 张颖. 硅基PZT压电功能结构[J]. 光学精密工程, 2009,17(3): 583-588 DOI：

WANG Wei, TIAN Li, LIU Xiao-wei, REN Ming-yuan, ZHANG Ying. PZT piezoelectric function structure on silicon substrate[J]. Editorial Office of Optics and Precision Engineering, 2009,17(3): 583-588 DOI：

摘要

为获得适合单片集成的硅基PZT压电功能结构

对近年PZT薄(厚)膜在MEMS领域的研究现状进行了综述分析

提出了一种新型的双杯PZT/Si膜片式功能结构。采用有限元方法对双杯PZT/Si膜片进行了结构优化

得到PZT和上下硅杯的结构优化值为

PZT

∶

=0.75∶1.1∶1

一阶模态谐振频率为13.2 kHz。以氧化、双面光刻、各向异性刻蚀以及精密丝网印刷等工艺技术制作了双杯硅基PZT压电厚膜膜片

膜片具有压电驱动功能

PZT压电膜厚达80 m。实验表明

双杯PZT/Si膜片式功能结构的MEMS技术兼容性好

对芯片内其它元件或电路的影响小

适合作为MEMS片内执行元件的驱动机构。

Abstract

In order to obtain a PZT piezoelectric function structure on the silicon substrate suitable for monolithic integrated chip

the research status quo of PZT piezoelectric thin (thick) films in the field of MEMS is analyzed

and then a new type of bi-cup PZT/Si film function structure is presented. This structure is optimized and designed with ANSYS finite element analysis software. The optimized structure parameters of the PZT and up-/sub-silicon-cup are

PZT

∶

=0.75∶1.1∶1;and the resonant frequency of the first-order modality is 13.2 kHz. The bi-cup PZT piezoelectric thick film on the silicon substrate is fabricated with the oxidation

lithography

anisotropism etching and screen-printing processing

whose thickness is 80 m

and has piezoelectric driving function. This PZT piezoelectric thick film driving structure with bi-cup on the silicone substrate has a better compatibility with MEMS technique

and is suitable to be a driving component for MEMS micro-actuator.

关键词

Keywords

references

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