Research on the Influence Factors of Nano-scale Line Edge Roughness Measurement Using AFM

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Research on the Influence Factors of Nano-scale Line Edge Roughness Measurement Using AFM

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- Research on the Influence Factors of Nano-scale Line Edge Roughness Measurement Using AFM
- Optics and Precision Engineering Vol. 17, Issue 4, Pages: 839-848(2009)
- 作者机构：
  
  哈尔滨工业大学机电工程学院
- 作者简介：
- 基金信息：
- DOI：
  CLC： TG84TH161
- Received：20 June 2008，
  
  Revised：04 August 2008，
  
  Published Online：25 April 2009，
  
  Published：25 April 2009
- 稿件说明：
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赵学增,李宁,周法权,李洪波. 使用AFM测量纳米尺度刻线边缘粗糙度的影响因素的研究[J]. 光学精密工程, 2009,17(4):839-848

Research on the Influence Factors of Nano-scale Line Edge Roughness Measurement Using AFM[J]. Optics and precision engineering, 2009, 17(4): 839-848.
赵学增,李宁,周法权,李洪波. 使用AFM测量纳米尺度刻线边缘粗糙度的影响因素的研究[J]. 光学精密工程, 2009,17(4):839-848 DOI：

Research on the Influence Factors of Nano-scale Line Edge Roughness Measurement Using AFM[J]. Optics and precision engineering, 2009, 17(4): 839-848. DOI：

摘要

随着半导体制造技术降至100nm以下技术节点，刻线边缘粗糙度的测量与控制已成为纳米测量中的研究热点之一。本文对使用原子力显微镜(AFM)测量半导体刻线边缘粗糙度的影响因素问题进行了研究。根据线边缘粗糙度测量与表征的特点对各种影响因素进行理论和实验分析，包括探针针尖尺寸与形状的非理想性、AFM扫描图像的噪声、扫描采样间隔、压电晶体驱动精度、悬臂梁振动以及线边缘检测算法中的自由参数等。在对这些影响因素进行分析的基础上分别提出抑制及修正方法，从而在一定程度上提高LER测量结果的准确度，为实现半导体制造业不断提高的刻线形貌测量的精度要求提供了可行性参考。

Abstract

As critical dimensions shrink to sub-100nm node and below in the semiconductor industry

the measure and control line edge roughness (LER) in nanometer-scale measurement has become critical. The problem of the influence factors of measuring semiconductor line edge roughness (LER) using AFM is studied. Aim at the current LER measurement method the influence factors of measuring precision are analyzed

including the nonideal property of the size and shape of probe tips

the signal noise of AFM image

scan sampling interval

the driving precision of piezoelectricity

cantilever oscillation and the free parameters of edge detection algorithm and so on. In this paper the influence factors of measuring LER using AFM are analyzed theoretically and the methods for restraining and amending the measure errors are respectively proposed. Accordingly a more precise measurement result of LER using AFM is obtained. In addition

a theoretical reference is provided in order to achieve the request on the improving measurement precision of line structure topography measurement in the semiconductor industry.

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Related Institution

Engineering Research Center of Mechanical Testing Technology and Equipment， Ministry of Education， Chongqing University of Technology

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State Key Lab of Precision Measurement Technology and Instruments, School of Precision Instrument and Opto-Electronics Engineering, Tianjin University

School of Science, Tianjin University

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