laser protection circuit and laser chips were packaged to a laser module which was used in the pulse semiconductor laser sending system.When the laser pulses width is around several nanoseconds
the pins of packaged lasers introduce resistance which would distort the shape of waveform and reduce the energy coupling into laser chips. To get high peak power laser pulse with short pulse width and fast risetime
the structure of the laser chips was improved
and optoelectronic hybrid Integration was used to package driver and laser chips together into a module. In this way
short current pulses can be coupled into laser chips effectively. We analyze and prove that the improved laser module can produce optical pulses with better output parameters. On the same condition
when pulses width were around 4.5ns
laser module can produced 6 times larger peak optical power than that were produced by packaged laser with same driving circuit. The module can get Pulses with pulse width around 7ns and peak optical power 176W. U-P curve of laser module was measured when the pulse width is around 7ns.