Terminating type MEMS microwave power sensor based on MMIC

XU Ying-lin; LIAO Xiao-ping; TIAN Tao

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Terminating type MEMS microwave power sensor based on MMIC

Article | 更新时间：2020-08-12

- Terminating type MEMS microwave power sensor based on MMIC
- Optics and Precision Engineering Vol. 17, Issue 7, Pages: 1656-1659(2009)
- 作者机构：
  
  东南大学 MEMS教育部重点实验室,江苏南京,210096
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN62;TP212.1
- Received：20 January 2009，
  
  Revised：30 April 2009，
  
  Published Online：25 July 2009，
  
  Published：25 July 2009
- 稿件说明：
移动端阅览
许映林, 廖小平, 田涛. 基于单片式微波集成电路的终端式 MEMS微波功率传感器[J]. 光学精密工程, 2009,17(7): 1656-1659

XU Ying-lin, LIAO Xiao-ping, TIAN Tao. Terminating type MEMS microwave power sensor based on MMIC[J]. Editorial Office of Optics and Precision Engineering, 2009,17(7): 1656-1659
许映林, 廖小平, 田涛. 基于单片式微波集成电路的终端式 MEMS微波功率传感器[J]. 光学精密工程, 2009,17(7): 1656-1659 DOI：

XU Ying-lin, LIAO Xiao-ping, TIAN Tao. Terminating type MEMS microwave power sensor based on MMIC[J]. Editorial Office of Optics and Precision Engineering, 2009,17(7): 1656-1659 DOI：

摘要

提出了一种基于塞贝克效应的终端式MEMS微波功率传感器

该传感器的制作工艺与GaAs单片式微波集成电路(MMIC)工艺兼容。利用热电偶检测温度差

生成与微波功率成比例的直流电压

由GaAs/Au热电偶串联构成热堆。传感器将电功率转化为热

再间接测量热堆生成的直流电压。采用微机械加工技术

去除了器件底部的GaAs衬底

从而减小了热损耗和电磁损耗

提高了灵敏度。测试结果表明

在0~20 GHz内

HFSS模拟的

＜-22 dB;测试输入功率为-20~20 dBm时

频率为0~20 GHz;在20 GHz时

灵敏度高于0.15 mV/mW;在整个频率范围内

回波损耗低于-26 dB。

Abstract

On the basis of the Seebeck effect

a terminating type MEMS microwave power sensor fully compatible with the GaAs Monolithic Microwave Integrated Circuits(MMIC) process is presented. A thermocoupler in the microwave power sensor is used to detect the temperature difference and to generate a DC voltage proportional to the microwave power. Then

a series of GaAs/Au thermocouples make up a thermopile. The sensor based on a simple principle converts the electric power into heat and the DC voltage produced by the heat is indirectly measured

so that the output microwave power can be obtained. Moreover

in order to minimize the thermal and electromagnetic losses

the bulk GaAs located beneath the device is removed through micromachining. As a result

the sensitivity of the sensor is improved. Tested results show that the HFSS simulation of

is less than -22 dB when the sensor measures the microwave power from -20 dBm to +20 dBm. The sensor sensitivity is higher than 0.15 mV/mW at 20 GHz

and the input return loss is less than -26 dB over the entire frequency ranges.

关键词

Keywords

references

ZHANG T, WU Y H, LI H W, et al.. Micro electromagnetic actuator with high energy density based on MEMS technology[J]. Opt. Precision Eng., 2007,15(6):866-872.(in Chinese)[2] WEI X G, JIANG J, WEN ZH M, et al.. Optical system design for MEMS based digital sun sensor[J]. Opt. Precision Eng., 2008,16(8):1361-1366.(in Chinese)[3] SHI Y F, SHI Y B, LIU Y H, et al.. Sulfur dioxide poison gas sensor based on MEMS laminated microstructure[J]. Opt. Precision Eng., 2008,16(6):1075-1081.(in Chinese)[4] MILANOVIC V, GAITAN M, BOWEN E D, et al.. Thermoelectric power sensor for microwave applications by commercial cmos fabrication[J]. IEEE Electron Device Letters, 1997,18(9):450-452.[5] MILANOVIC V, GAITAN M, BOWEN E D, et al.. Implementation of thermoelectric microwave power sensors in cmos technology . IEEE International Symposium on Circuits and Systems, 1997(4):2753-2756.[6] MUTANMBA K, BEILENHOFF K, MEGEJ A, et al.. Micromachined 60 GHz GaAs power sensor with integrated received antenna . Proceedings of IEEE MTT-S Symposium, 2001(3):2235-2238.[7] MILANOVIC V, GAITAN M, ZAGHLOUL M E. Micromachined Thermocouple microwave detector in cmos technology . IEEE 39th Midwest symposium on Circuits and Systems, 1996(1):273-276.

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