Test of nanomechanical properties of single crystal silicon

ZHAO Hong-wei; YANG Bai-hao; ZHAO Hong-jian; HUANG Hu

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Test of nanomechanical properties of single crystal silicon

Article | 更新时间：2020-08-12

- Test of nanomechanical properties of single crystal silicon
- Optics and Precision Engineering Vol. 17, Issue 7, Pages: 1602-1608(2009)
- 作者机构：
  
  1. 吉林大学机械科学与工程学院,吉林长春,130022
  2. 北京航天计量测试技术研究所力学室北京,100076
  3. 浙江大学材料与化学工程学院,浙江杭州,310027
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN304.07
- Received：13 March 2008，
  
  Revised：29 May 2008，
  
  Published Online：25 July 2009，
  
  Published：25 July 2009
- 稿件说明：
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赵宏伟, 杨柏豪, 赵宏健, 黄虎. 单晶硅纳米力学性能的测试[J]. 光学精密工程, 2009,17(7): 1602-1608

ZHAO Hong-wei, YANG Bai-hao, ZHAO Hong-jian, HUANG Hu. Test of nanomechanical properties of single crystal silicon[J]. Editorial Office of Optics and Precision Engineering, 2009,17(7): 1602-1608
赵宏伟, 杨柏豪, 赵宏健, 黄虎. 单晶硅纳米力学性能的测试[J]. 光学精密工程, 2009,17(7): 1602-1608 DOI：

ZHAO Hong-wei, YANG Bai-hao, ZHAO Hong-jian, HUANG Hu. Test of nanomechanical properties of single crystal silicon[J]. Editorial Office of Optics and Precision Engineering, 2009,17(7): 1602-1608 DOI：

摘要

对材料纳米力学性能测试手段进行了研究

着重分析了纳米压痕技术的原理和方法。结合纳米压痕技术

采用尖端四面体Vickers型单晶金刚石压头对单晶硅(100)晶面进行了纳米压痕实验测试。实验发现

在载荷为1 000 mN时

晶体硅出现了明显的裂纹和脆性断裂;而在载荷低于80 mN的情况下

晶体硅则表现出延性特性。此外

在不同载荷条件下对晶体硅的硬度进行了实验测试

测试结果发现

不同载荷条件下晶体硅的硬度测量值存在较大的差异

认为导致这种差异的原因在于压痕区域晶体硅所受压力不同

使得晶体硅内部结构发生了改变

较为准确的单晶硅的硬度测量值为15.7 GPa。

Abstract

The testing methods for nanomechanic properties of materials widely used in machining in micro-nano scale

MEMS/NEMS

biomedical engineering

material sciences

etc

. are researched and the main principle and methods of nanoindentation technology are analyzed. By a four-sided Vickers diamond indenter with a sharpened tip

the nanoindentation experiments are undertaken to test the single crystal silicon on (100) crystal surface with the help of a nanoindentation tester.Experiments show that the brittle crack is occurred around the nanoindentation zone on silicon surface when the maximum load of indentation is 1 000 mN. However

the crystal silicon shows plastic property when the maximum load of indentation is below 80 mN. Moreover

the hardness test of the crystal silicon with different loads is carried out

and the testing results show that the hardness is quite different in different loads.It is explained that the appeared phenomenon may come from the phase transformation under the nanoindentation zone inside the silicon wafer

because the pressure around the nanoindentation zone is different. The testing result of the hardness of single crystal silicon is about 15.7 GPa.

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references

赵宏伟, 刘建芳, 华顺明, 等. 压电型步进精密旋转驱动器[J]. 光学精密工程,2005,13(3):305-310. ZHAO H W, LIU J F, HUA SH M, et al.. Piezoelectric-type stepping precision rotary actuator[J]. Opt. Precision Eng., 2005,13(3):305-310.(in Chinese)[2] YAN J, ZHAO H, KURIYAGAWA T, et al.. Nanoindentation and diamond turning tests on compound semiconductor InP . Proceedings of the 6th euspen International Conference, 2006:276-279.[3] 赵清亮, 陈明君, 梁迎春,等. 单晶金刚石车刀在超精密单点切削中的磨损分析[J]. 摩擦学学报, 2002,22(5):321-327. ZHAO Q L, CHENG M J, LIANG Y CH, et al.. Wear of diamond cutting tool in ultra-precision single point turning[J]. Tribology, 2002,22(5):321-327. (in Chinese)[4] YAN J, MAEKAWA K, TAMAKI J,et al.. Micro grooving on single-crystal germanium for infrared Fresnel lenses[J]. Journal of Micromechanics and Microengineering,2005,15:1925-1931.[5] Mohamed Gad-el-Hak. The MEMS Handbook[M]. Florida:CRC Press, 2001.[6] 张泰华, 杨业敏, 赵亚溥,等. MEMS材料力学特性的测试技术[J]. 力学进展,2002,32(4):545-562. ZHANG T H, YANG Y M, ZHAO Y P, et al.. Measurement of mechanical properties of mems materials[J]. Advances in Mechanics, 2002,32(4):545-562. (in Chinese)[7] 李学敏,汪家道,陈大融,等. 纳米压痕法研究金刚石薄膜的力学性能[J]. 硅酸盐学报,2005,33(12):1539-1543. LI X M, WANG J D, CHEN D R, et al.. Mechanical properties of diamond thin films characterized by nano-indentation method . Journal of the Chinese Ceramic Society, 2005,33(12):1539-1543. (in Chinese)[8] ZHU Y,ESPINOSA H D. An electromechanical material testing system for in situ electron microscopy and applications . Proceedings of the National Academy of Sciences of the United States of America, 2005,102(41):14503-14508.[9] SZLUFARSKA I, NAKANO A, VASHISHTA P. A Crossover in the mechanical response of nanocrystalline ceramics[J]. Science, 2005,309:911-915.[10] HAQUE M A,SAIF M T A. Deformation mechanisms in free-standing nanoscale thin films: A quantitative in situ transmission electron microscope study . Proceedings of the National Academy of Sciences of the United States of America, 2004,101(17):6335-6340.[11] MILLS J P, DIEZ-SILVA M, QUINN D J, et al.. Effect of plasmodial RESA protein on deformability of human red blood cells harboring Plasmodium falciparum . Proceedings of the National Academy of Sciences of the United States of America, 2007,104(22):9213-9217.[12] LI J, VLIET K J V, ZHU T, et al.. Atomistic mechanisms governing elastic limit and incipient plasticity in crystals[J]. Nature, 2002,418(18):307-310.[13] BHUSHAN B. Nanotribology and Nanomechanics: An Introduction[M]. Heidelberg:Springer-Verlag, 2005.[14] International Organization for Standards. Metallic Materials-Instrumented Indentation Test for Hardness and Materials Parameters[S]. ISO 14577, Geneva, Switzerland, 2002.[15] MINOR A M, MORRIS J W, STACH Jr E A. Quantitative in situ nanoindentation in an electron microscope[J]. Applied Physics Letters, 2001,79(11):1625-1627.[16] BOURHIS E, PATRIARCHE G. TEM-nanoindentation studies of semiconducting structures[J]. Micron, 2007,38(4):377-389.[17] ZARUDI I, ZHANG L C. Structure changes in mono-crystalline silicon subjected to indentation - experimental findings[J]. Tribology International, 1999,32:701-712.[18] HABERL B, BRADBY J E, SWAIN M V, et al.. Phase transformations induced in relaxed amorphous silicon by indentation at room temperature[J]. Applied Physics Letters, 2004,85(23):5559-5561.

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