A Silicon microchannel heat sink for high-power laser diode arrays

YANG Tao

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A Silicon microchannel heat sink for high-power laser diode arrays

Article | 更新时间：2020-08-12

- A Silicon microchannel heat sink for high-power laser diode arrays
- Optics and Precision Engineering Vol. 17, Issue 9, Pages: 2170-2175(2009)
- 作者机构：
  
  西南科技大学
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：01 September 2008，
  
  Revised：15 October 2008，
  
  Published Online：25 September 2009，
  
  Published：25 September 2009
- 稿件说明：
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杨涛. 用于大功率激光二极管列阵的硅基微通道热沉研制[J]. 光学精密工程, 2009,17(9):2170-2175

YANG Tao. A Silicon microchannel heat sink for high-power laser diode arrays[J]. Optics and precision engineering, 2009, 17(9): 2170-2175.
杨涛. 用于大功率激光二极管列阵的硅基微通道热沉研制[J]. 光学精密工程, 2009,17(9):2170-2175 DOI：

YANG Tao. A Silicon microchannel heat sink for high-power laser diode arrays[J]. Optics and precision engineering, 2009, 17(9): 2170-2175. DOI：

摘要

将田口稳健设计方法用于面向大功率激光二极管列阵的硅基屋脊式微通道热沉的优化设计，利用正交试验和信噪比分析实现了参数的稳健优化。采用激光二极管条对样品进行了封装和测试。利用砷化镓激光波长的温度漂移系数估算出了中间的激光二极管条的有源区温升。测试结果表明，该微通道热沉的单位面积热阻约为0.070 K

8226;cm2/W，与有限元分析结果基本一致。

Abstract

Taguchi robust design method is applied to the design of silicon roof-like microchannel heat sinks. Orthogonal experiments are designed and signal-noise ratios calculated to carry out the robust optimization of key parameters. Laser diode bars are welded on a prototype heat sink to test its thermal resistance. The active region temperature rise of the middle bar is estimated using the temperature coefficient of GaAs laser wavelength. Experimental results show that the thermal resistance per unit area is 0.070 K

8226;cm2/W

which agrees with that calculated with the finite element method.

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Related Institution

Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences

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State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences

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