Design and Fabrication of a DC to 30 GHz DC-Contact Shunt RF MEMS Switch

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Design and Fabrication of a DC to 30 GHz DC-Contact Shunt RF MEMS Switch

Article | 更新时间：2020-08-12

- Design and Fabrication of a DC to 30 GHz DC-Contact Shunt RF MEMS Switch
- Optics and Precision Engineering Vol. 17, Issue 8, Pages: 1922-1927(2009)
- 作者机构：
  
  清华大学2. 清华大学微电子所
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：01 September 2008，
  
  Revised：23 October 2008，
  
  Published Online：20 August 2009，
  
  Published：20 August 2009
- 稿件说明：
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侯智昊,刘泽文,李志坚. 一种DC～30 GHz并联接触式RF MEMS开关的设计与制造研究[J]. 光学精密工程, 2009,17(8):1922-1927

Design and Fabrication of a DC to 30 GHz DC-Contact Shunt RF MEMS Switch[J]. Optics and precision engineering, 2009, 17(8): 1922-1927.
侯智昊,刘泽文,李志坚. 一种DC～30 GHz并联接触式RF MEMS开关的设计与制造研究[J]. 光学精密工程, 2009,17(8):1922-1927 DOI：

Design and Fabrication of a DC to 30 GHz DC-Contact Shunt RF MEMS Switch[J]. Optics and precision engineering, 2009, 17(8): 1922-1927. DOI：

摘要

介绍了一种适用于DC～30 GHz频率应用的并联接触式RF MEMS开关的设计与制造研究。利用低应力电镀Au桥膜作为上电极，实现了接触电极之间的Au-Au接触。使用Borofloat™玻璃作为衬底，内置射频信号与驱动电极旁路的隔离电阻，并且通过对上电极桥膜与CPW间距的优化设计，使其具有很低的插入损耗。所设计制造的并联接触式RF MEMS开关的下拉电压为60 V，上下电极的接触电阻为0.1 Ω。插入损耗为-0.03 dB@1 GH，-0.13 dB@10 GHz和-0.19 dB@20 GHz，在DC～30 GHz的频率范围内，其插入损耗都小于-0.5 dB；其隔离度为-47 dB@1 GHz，-30 dB@10 GHz和-25 dB@20 GHz，并且，其隔离度在DC～30 GHz的频率范围内都大于-23 dB。所设计的并联接触式RF MEMS开关适合于DC～30 GHz的频率范围内的应用，是一种宽应用频率范围的RF MEMS开关。

Abstract

The design and fabrication of DC-contact shunt RF MEMS switch is reported. Au-Au direct contact is achieved by using low stress electroplated Au membrane. Borofloat™ glass is used as substrate. Inside resistance is used to isolate the crosstalk between radio-frequency signal and bias voltage. The distance between the Au membrane and CPW is optimized which make the switch low insertion loss. The contact resistance is 0.1 Ω under the pull-down voltage of 60 V. The insertion loss is -0.03 dB@1 GH

-0.13 dB@10 GHz

-0.19 dB@20 GHz

and in the frequency range from DC to 30 GHz

the insertion loss is less than -0.5 dB; the isolation is -47 dB@1 GHz

-30 dB@10 GHz and -25 dB@20 GHz

and the isolation is better than -23 dB in the frequency range from DC to 30 GHz. The fabricated RF MEMS switch is suitable for the application of frequency range from DC to 30 GHz.

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Related Author

JI Guo-shun

ZHANG Yong-kang

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Wang Liding

Wu Yihui

Related Institution

Mechanical School of Jiangsu University

Changchun Institute of Optics and Fine Mechanics, Chinese Academy of Sciences

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