Preparation of ScAlN thin film through reactive magnetron sputtering

Yu-xin CHEN; Yu-fei LIU; Zheng-guo SHANG

doi:10.37188/OPE.20202809.1924

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Preparation of ScAlN thin film through reactive magnetron sputtering

Modern Applied Optics | 更新时间：2020-09-28

- Preparation of ScAlN thin film through reactive magnetron sputtering
- Optics and Precision Engineering Vol. 28, Issue 9, Pages: 1924-1929(2020)
- 作者机构：
  
  1.重庆大学光电工程学院, 重庆 400044
  2.重庆大学光电技术及系统教育部重点实验室, 重庆 400044
- 作者简介：
- 基金信息：
- DOI：10.37188/OPE.20202809.1924
  CLC： O484.1
- Received：11 February 2020，
  
  Revised：18 February 2020，
  
  Accepted：18 February 2020，
  
  Published：25 September 2020
- 稿件说明：
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Yu-xin CHEN, Yu-fei LIU, Zheng-guo SHANG. Preparation of ScAlN thin film through reactive magnetron sputtering[J]. Optics and precision engineering, 2020, 28(9): 1924-1929.
DOI：

Yu-xin CHEN, Yu-fei LIU, Zheng-guo SHANG. Preparation of ScAlN thin film through reactive magnetron sputtering[J]. Optics and precision engineering, 2020, 28(9): 1924-1929. DOI： 10.37188/OPE.20202809.1924.

摘要

为了制备出压电性能良好、c轴择优生长的氮化铝钪压电薄膜，本文利用脉冲直流反应磁控溅射法制备了几组氮化铝钪薄膜，通过控制变量，并利用X射线衍射仪、扫描电子显微镜和压电系数测试仪等测试设备，研究了气体流量、功率、衬底温度、缓冲层结构以及掺钪对薄膜结晶质量及性能的影响，优化了工艺参数。结果表明，相比于钛铂缓冲层，使用氮化铝/钛/铂缓冲层制备薄膜，可以使摇摆曲线半高宽由2.62°降至2.38°。然后，对钪掺杂机理进行了简单分析，本文所制备氮化铝钪薄膜的纵向压电系数

高达-10.5 pC/N，是纯氮化铝压电系数的1.9倍，XRD图谱及SEM图像表明，在该掺杂浓度下，压电系数的提高主要是通过钪掺杂产生的晶格畸变引起，而非改变了晶体结构。

Abstract

To prepare a well-oriented ScAlN piezoelectric film with a high piezoelectric coefficient

several groups of ScAlN films were prepared by pulse-DC reactive magnetron sputtering. The effects of gas ratio

power

substrate temperature

buffer layer

and dope rate were investigated through a control variate method. X-ray diffractometer (XRD)

scanning electron microscope (SEM)

and piezoelectric coefficient tester were used for characterization. The results show that the film prepared with AlN/Ti/Pt has a lower FWHM in rocking curve (2.38°) compared with the buffer layer of Ti/Pt (2.62°). The principle of scandium doping was briefly discussed. The ScAlN film prepared in this study has a longitude piezoelectric constant

of -10.5 pC/N

which is 0.9 times higher than that in pure AlN. XRD patterns and SEM images reveal that the improvement in piezoelectric constant is caused by the distortion of the lattice rather than a transition in the crystal structure.

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