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1.郑州大学 机械与动力工程学院热能系统节能技术与 装备教育部工程研究中心,河南 郑州 450001
2.河南晶华膜技真空科技有限公司,河南 焦作 454150
Received:15 June 2021,
Revised:13 August 2021,
Published:25 February 2022
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郑锦华,刘青云,李志雄.负偏压对含氢类金刚石薄膜性能的影响[J].光学精密工程,2022,30(04):411-420.
ZHENG Jinhua,LIU Qingyun,LI Zhixiong.Effect of negative bias voltage on properties of hydrogenated diamond-like carbon films[J].Optics and Precision Engineering,2022,30(04):411-420.
郑锦华,刘青云,李志雄.负偏压对含氢类金刚石薄膜性能的影响[J].光学精密工程,2022,30(04):411-420. DOI: 10.37188/OPE.20223004.0411.
ZHENG Jinhua,LIU Qingyun,LI Zhixiong.Effect of negative bias voltage on properties of hydrogenated diamond-like carbon films[J].Optics and Precision Engineering,2022,30(04):411-420. DOI: 10.37188/OPE.20223004.0411.
为了解决类金刚石(DLC)薄膜与金属基材间的界面结合强度问题,本研究采用直流等离子体增强化学气相沉积(DC-PECVD)技术,以等时长、不同偏压条件在45钢基材上沉积复合DLC薄膜。采用扫描电镜、原子力显微镜观察薄膜形貌;采用拉曼光谱仪分析薄膜成分;采用涂层附着力自动划痕仪测定膜基结合强度。结果表明:制备偏压从
-
600 V~
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1 200 V变化时,复合DLC薄膜表面粗糙度增大,薄膜总厚度增加,总膜厚最大为16.3 μm;氢含量降低,石墨相对含量增加,过渡层DLC与顶层DLC膜间的结构成分差异减小。在等时长沉积条件下,随着制备负偏压的增加,复合DLC薄膜残余应力增大,结合力减小,结合力最大为54.5 N左右。顶层DLC膜制备偏压为
-
600 V~
-
800 V时综合性能较优。
To solve the problem of interfacial bonding strength between diamond-like carbon (DLC) films and metal substrates, this study uses direct current plasma enhanced chemical vapor deposition (DC-PECVD) technology to deposit composite DLC films under the same duration but with different negative bias voltage conditions on 45 steel substrates. A scanning electron microscope (SEM) and an atomic force microscope (AFM) were used to observe the morphology of the films, a Raman spectrometer was used to analyze their compositions, and a coating adhesion automatic scratch tester was used to determine the bonding strength between the films and substrates. The results show that when the bias voltage changes from
-
600 V to
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1 200 V, the surface roughness of the films increases, the total film thickness increases (up to 16.3 μm), the hydrogen content decreases, the graphite relative content increases, and the structural composition difference between the transition layer DLC and the top DLC film decreases. Meanwhile, the residual stress increases, the binding force decreases, and the maximum value is approximately 54.5 N. When the bias voltage of the top DLC layer is between
-
600 V and
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800 V, the comprehensive performance improves.
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