Preparation and photodetection performance of ZnO nanorods/Bi<sub>2</sub>S<sub>3</sub> quantum dots heterojunction

ZHU Jianhua; RONG Ping; REN Shuai; GUO Xinyu; GAO Shiyong

doi:10.37188/OPE.20223016.1915

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Preparation and photodetection performance of ZnO nanorods/Bi₂S₃ quantum dots heterojunction

Modern Applied Optics | 更新时间：2026-09-11

- Preparation and photodetection performance of ZnO nanorods/Bi₂S₃ quantum dots heterojunction
- Optics and Precision Engineering Vol. 30, Issue 16, Pages: 1915-1923(2022)
- 作者机构：
  
  1.太原学院材料与化学工程系，山西太原 030032
  2.哈尔滨工业大学材料科学与工程学院，黑龙江哈尔滨 150001
- 作者简介：
- 基金信息：
- DOI：10.37188/OPE.20223016.1915
  CLC： TN36
- Received：21 April 2022，
  
  Revised：2022-05-09，
  
  Published：25 August 2022
- 稿件说明：
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朱建华,容萍,任帅等.ZnO纳米棒/Bi₂S₃量子点异质结的制备及光电探测性能研究[J].光学精密工程,2022,30(16):1915-1923. DOI: 10.37188/OPE.20223016.1915.

ZHU Jianhua,RONG Ping,REN Shuai,et al.Preparation and photodetection performance of ZnO nanorods/Bi₂S₃ quantum dots heterojunction[J].Optics and Precision Engineering,2022,30(16):1915-1923. DOI: 10.37188/OPE.20223016.1915.
朱建华,容萍,任帅等.ZnO纳米棒/Bi₂S₃量子点异质结的制备及光电探测性能研究[J].光学精密工程,2022,30(16):1915-1923. DOI: 10.37188/OPE.20223016.1915. DOI：

ZHU Jianhua,RONG Ping,REN Shuai,et al.Preparation and photodetection performance of ZnO nanorods/Bi₂S₃ quantum dots heterojunction[J].Optics and Precision Engineering,2022,30(16):1915-1923. DOI: 10.37188/OPE.20223016.1915. DOI：

摘要

为了获得具有多波段响应的ZnO基宽光谱光电探测器，将ZnO与其它窄带隙半导体耦合构建异质结，并基于此制备了光电探测器。本文采用水热法结合连续离子层吸附反应法在FTO衬底上成功制备了ZnO纳米棒/Bi

量子点异质结材料。通过扫描电子显微镜和能谱仪表征了ZnO纳米棒/Bi

量子点异质结的表面形貌和元素组成。结果表明，Bi

量子点均匀且致密地附着在整个ZnO纳米棒上。此外，基于该ZnO纳米棒/Bi

量子点异质结制备的探测器能够在无外加偏压条件下工作，即具有自供能特性。与ZnO纳米棒探测器相比，ZnO纳米棒/Bi

量子点探测器在紫外光照射下的光电流增大了0.065 mA，这主要是因为两者形成的异质结能够有效抑制光生载流子的复合。此外，ZnO纳米棒/Bi

量子点探测器对可见光也具有优异的探测能力，其对波长为470 nm的蓝光和530 nm的绿光的探测均表现出良好的循环稳定性。

Abstract

In order to obtain a ZnO-based broadband photodetector with a multi-band response， ZnO is coupled with other narrow-bandgap semiconductors to construct the heterojunction. In this study， ZnO nanorods （NRs） arrays were first grown on FTO substrates through the hydrothermal process. Then， Bi

quantum dots （QDs） were synthesized on the surface of ZnO NRs via the successive ionic layer absorption reaction method， thereby successfully constructing the ZnO NRs/Bi

QDs heterojunction. The micro-morphology and elemental composition of as-prepared samples were characterized using a scanning electron microscope and energy dispersive spectrometer. The results show that the Bi

QDs are uniformly and densely attached to the surface of Z

nO NRs that are slightly curved and partially intertwined at the top. Then， a broadband photodetector was fabricated based on the as-prepared heterojunction. In addition， the photodetector based on the ZnO NRs/Bi

QDs heterojunction can operate without an external power source， indicating that the photodetector has a self-powered feature. Compared with the ZnO NRs photodetector， the maximum photocurrent of the ZnO NRs/Bi

QDs photodetector under UV light irradiation increases by approximately 0.065 mA. This is mainly because the type II band alignment between ZnO and Bi

increases the separation efficiency of photogenerated charge carriers. Furthermore， the ZnO NRs/Bi

QDs photodetector has excellent detection capability for visible light， exhibiting excellent cycle stability when irradiated by blue （470 nm） and green light （530 nm）.

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references

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Preparation and photodetection performance of ZnO nanorods/Bi2S3 quantum dots heterojunction

DOI：10.37188/OPE.20223016.1915

摘要

Abstract

关键词

Keywords

references

Preparation and photodetection performance of ZnO nanorods/Bi₂S₃ quantum dots heterojunction