Optical detection method of electrical signals inside integrated circuits based on lock-in amplifier

LIU Pengcheng; MA Yingqi; HAN Jianwei

doi:10.37188/OPE.20223018.2178

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Optical detection method of electrical signals inside integrated circuits based on lock-in amplifier

Modern Applied Optics | 更新时间：2026-09-12

- Optical detection method of electrical signals inside integrated circuits based on lock-in amplifier
- Optics and Precision Engineering Vol. 30, Issue 18, Pages: 2178-2186(2022)
- 作者机构：
  
  1.中国科学院国家空间科学中心空间天气学国家重点实验室，北京 100190
  2.中国科学院大学天文与空间科学学院，北京 100049
- 作者简介：
- 基金信息：
- DOI：10.37188/OPE.20223018.2178
  CLC： TN406;TN249;TN911.8
- Received：25 March 2022，
  
  Revised：2022-05-07，
  
  Published：25 September 2022
- 稿件说明：
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刘鹏程,马英起,韩建伟.基于锁相放大的集成电路内部电信号光学探测方法[J].光学精密工程,2022,30(18):2178-2186.

LIU Pengcheng,MA Yingqi,HAN Jianwei.Optical detection method of electrical signals inside integrated circuits based on lock-in amplifier[J].Optics and Precision Engineering,2022,30(18):2178-2186.
刘鹏程,马英起,韩建伟.基于锁相放大的集成电路内部电信号光学探测方法[J].光学精密工程,2022,30(18):2178-2186. DOI： 10.37188/OPE.20223018.2178.

LIU Pengcheng,MA Yingqi,HAN Jianwei.Optical detection method of electrical signals inside integrated circuits based on lock-in amplifier[J].Optics and Precision Engineering,2022,30(18):2178-2186. DOI： 10.37188/OPE.20223018.2178.

摘要

为了实现集成电路内部电信号波形的非接触探测，设计了基于共光路干涉仪的探测光路，同时利用锁相放大技术噪声抑制能力强，灵敏度高的特点，提出了基于锁相放大的信号处理方法提取反射光中携带的微弱器件电光信号。该方法利用器件电光信号强度随器件电信号周期性变化的特点，首先将来自光电探测器的电信号进行锁相放大处理消除大部分噪声，然后再利用平均处理技术进一步抑制外界噪声干扰，提高器件电光信号的信噪比，从而将淹没在噪声中的器件电光信号提取出来，重建器件内部电学信息。利用该探测方法成功探测到芯片内部动态工作电流在μA量级的电路节点电光信号，信噪比达到4.99 dB，而仅使用平均处理技术得到的信号信噪比只有

44.29 dB。研究内容为集成电路内部电信号的光学探测提供了一种新的思路，未来可在集成电路动态缺陷检测领域得到应用。

Abstract

As the number of interconnected layers on the front side of integrated circuits increase， it becomes increasingly difficult to detect the internal electrical signals from the front side of integrated circuits. A probing optical path based on the common-path interferometer is designed in this study to use a laser for detecting the internal electrical signal waveform from the back side of an integrated circuit without making contact. To this end， a signal processing method based on a lock-in amplifier is proposed to extract the weak electro-optical signal of the device carried in the reflected light， which exploits the strong noise rejection and high sensitivity of the lock-in amplifier technique. Considering that the electro-optical signal of the device varies periodically with the electrical signal， the electrical signal from the photodetector is first processed by the lock-in amplifier to eliminate most of the noise， and then the averaging technique is employed to further suppress the external noise and improve the signal-to-noise ratio of the electro-optical signal of the device. Finally， the electro-optical signal of a device drowned in noise is extracted and the electrical information inside the device is reconstructed. The electro-optical signal of the circuit node with a dynamic operating current in the order of μA inside the chip is successfully detect

ed using the proposed method. The signal-to-noise ratio of the extracted signal reaches 4.99 dB， while the signal-to-noise ratio of the signal obtained solely via the averaging technique is only

44.29 dB. This paper presents a novel method for the optical detection of electrical signals inside integrated circuits， which can be applied to perform dynamic defect detection of integrated circuits in the future.

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references

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