Cs/NF<sub>3</sub> activation of InGaAs photocathode

WANG Ziheng; LI Shiman; SHI Feng; QIAN Yunsheng; ZHANG Yijun

doi:10.37188/OPE.20233109.1277

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Cs/NF₃ activation of InGaAs photocathode

Modern Applied Optics | 更新时间：2023-05-15

- Cs/NF₃ activation of InGaAs photocathode
- Optics and Precision Engineering Vol. 31, Issue 9, Pages: 1277-1284(2023)
- 作者机构：
  
  1.南京理工大学电子工程与光电技术学院，江苏南京 210094
  2.微光夜视技术重点实验室，陕西西安 710065
- 作者简介：
- 基金信息：
- DOI：10.37188/OPE.20233109.1277
  CLC： TN223
- Received：05 September 2022，
  
  Revised：27 December 2022，
  
  Published：10 May 2023
- 稿件说明：
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王自衡,李诗曼,石峰等.InGaAs光电阴极的Cs/NF₃激活[J].光学精密工程,2023,31(09):1277-1284.

WANG Ziheng,LI Shiman,SHI Feng,et al.Cs/NF₃ activation of InGaAs photocathode[J].Optics and Precision Engineering,2023,31(09):1277-1284.
王自衡,李诗曼,石峰等.InGaAs光电阴极的Cs/NF₃激活[J].光学精密工程,2023,31(09):1277-1284. DOI： 10.37188/OPE.20233109.1277.

WANG Ziheng,LI Shiman,SHI Feng,et al.Cs/NF₃ activation of InGaAs photocathode[J].Optics and Precision Engineering,2023,31(09):1277-1284. DOI： 10.37188/OPE.20233109.1277.

摘要

为了提高InGaAs光电阴极的光电发射性能，探究新型激活工艺，采用Cs/NF

和Cs/O两种激活方式对InGaAs样品进行激活实验。对同一结构的InGaAs阴极样品，分别进行了激活实验、衰减实验、光谱响应测试和表面成分分析，分别从白光光电流、衰减稳定性、光谱响应和表面成分等角度测试并分析了不同激活工艺下阴极的性能参数。通过对比Cs/NF

和Cs/O两种激活方式的实验结果可知：Cs/NF

激活后的InGaAs光电阴极在白光光电流、截止波长和光谱响应方面明显优于Cs/O激活后的样品，光谱响应的增强效果在近红外波段尤为明显，在1 064 nm处Cs/NF

激活后阴极光谱响应是Cs/O激活后的4.7倍；然而，与GaAs光电阴极Cs/NF

激活能够获得更高的阴极稳定性这一现象不同，Cs/O激活的InGaAs光电阴极的稳定性明显优于Cs/NF

激活，Cs/NF

激活在截止波长和光谱响应方面的优势在连续光照衰减后消失。

Abstract

To improve the photoemission performance of the current InGaAs photocathode and explore a new activation recipe， two activation experiments of Cs/NF

and Cs/O were utilized to study the effects of different activation recipes on the performance of the InGaAs photocathode. For InGaAs samples of the same photocathode structure， activation experiments， decay experiments， spectral response measurements， and surface element composition analysis were performed to analyze the relationships between the activation recipes and the characteristics of the photocathode from the perspectives of the white light photocurrent， stability， spectral response， and surface element composition. The experimental results for Cs/NF

and Cs/O activation are as follows. The InGaAs photocathode sample activated by Cs/NF

is significantly better than that activated by Cs/O with regard to the white-light photocurrent， spectral response， and cutoff wavelength， and the enhancement effect of the spectral response is particularly obvious in the near-infrared range. At 1 064 nm， the spectral response of the sample activated by Cs/NF

is 4.7 times that of the sample activated by Cs/O. In contrast to the phenomenon that the GaAs photocathode can become more stable through Cs/NF

activation， the stability of the InGaAs sample activated by Cs/O is significantly better than that of the sample activated by Cs/NF

. In addition， the advantages of the cutoff wavelength and spectral response induced by Cs/NF

activation are lost after decay.

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references

MA X ， LI Y X ， HUANG R Y ， et al . Development and application of short wavelength infrared detectors ［J］. Infrared and Laser Engineering ， 2022 ， 51 （ 1 ）： 20210897 .

YE L ， LI H ， CHEN Z F ， et al . Near-infrared photodetector based on MoS 2 /black phosphorus heterojunction ［J］. ACS Photonics ， 2016 ， 3 （ 4 ）： 692 - 699 . doi: 10.1021/acsphotonics.6b00079 http://dx.doi.org/10.1021/acsphotonics.6b00079

KANEKO H ， MINEGISHI T ， HIGASHI T ， et al . Water splitting： stable hydrogen production from water on an NIR-responsive photocathode under harsh conditions （small methods 5/2018）［J］. Small Methods ， 2018 ， 2 （ 5 ）： 1800029 . doi: 10.1002/smtd.201870029 http://dx.doi.org/10.1002/smtd.201870029

田慧军，刘巧莉，岳恒，等 . 高比探测率和高速石墨烯/n-GaAs复合结构的光电探测器［J］. 中国光学， 2021 ， 14 （ 1 ）： 206 - 212 . doi: 10.37188/co.2020-0153 http://dx.doi.org/10.37188/co.2020-0153

TIAN H J ， LIU Q L ， YUE H ， et al . Hybrid graphene/n-GaAs photodiodes with high specific detectivity and high speed ［J］. Chinese Journal of Optics ， 2021 ， 14 （ 1 ）： 206 - 212 . （in Chinese） . doi: 10.37188/co.2020-0153 http://dx.doi.org/10.37188/co.2020-0153

SCHWEDE J W ， SARMIENTO T ， NARASIMHAN V K ， et al . Photon-enhanced thermionic emission from heterostructures with low interface recombination ［J］. Nature Communications ， 2013 ， 4 ： 1576 . doi: 10.1038/ncomms2577 http://dx.doi.org/10.1038/ncomms2577

KARKARE S ， BOULET L ， CULTRERA L ， et al . Ultrabright and ultrafast III-V semiconductor photocathodes ［J］. Physical Review Letters ， 2014 ， 112 （ 9 ）： 097601 . doi: 10.1103/physrevlett.112.097601 http://dx.doi.org/10.1103/physrevlett.112.097601

SMIRNOV K J ， DAVYDOV V V ， GLAGOLEV S F ， et al . Photocathodes for near infrared range devices based on InP/InGaAs heterostructures ［J］. Journal of Physics： Conference Series ， 2018 ， 1038 （ 1 ）： 12102 . doi: 10.1088/1742-6596/1038/1/012102 http://dx.doi.org/10.1088/1742-6596/1038/1/012102

RESTELLI A ， BIENFANG J C ， MIGDALL A L . Single-photon detection efficiency up to 50% at 1310 nm with an InGaAs/InP avalanche diode gated at 1.25 GHz ［J］. Applied Physics Letters ， 2013 ， 102 （ 14 ）： 141104 . doi: 10.1063/1.4801939 http://dx.doi.org/10.1063/1.4801939

REN B ， SHI F ， GUO H ， et al . Cs， O adsorption for forming GaAs photocathodes ［J］. Infrared and Laser Engineering ， 2016 ， 45 （ 8 ）： 821001 . doi: 10.3788/irla201645.0821001 http://dx.doi.org/10.3788/irla201645.0821001

LIU Z ， SUN Y ， PETERSON S ， et al . Photoemission study of Cs-NF 3 activated GaAs（100） negative electron affinity photocathodes ［J］. Applied Physics Letters ， 2008 ， 92 （ 24 ）： 241107 . doi: 10.1063/1.2945276 http://dx.doi.org/10.1063/1.2945276

LI S ， ZHANG Y J ， ZHANG K M ， et al . Comparison of activation behavior of Cs-O and Cs-NF 3 -adsorbed GaAs（1 0 0）-β 2 （2 × 4） surface： from DFT simulation to experiment ［J］. Journal of Colloid and Interface Science ， 2022 ， 613 ： 117 - 125 . doi: 10.1016/j.jcis.2022.01.013 http://dx.doi.org/10.1016/j.jcis.2022.01.013

JIN M C ， CHEN X L ， HAO G H ， et al . Research on quantum efficiency for reflection-mode InGaAs photocathodes with thin emission layer ［J］. Applied Optics ， 2015 ， 54 （ 28 ）： 8332 - 8338 . doi: 10.1364/ao.54.008332 http://dx.doi.org/10.1364/ao.54.008332

BOURREE L E ， CHASSE D ， THAMBAN P ， et al . MBE-grown InGaAs photocathodes ［C］. Proc. of SPIE ， 2003 ， 4796 ： 1 - 10 . doi: 10.1117/12.450884 http://dx.doi.org/10.1117/12.450884

FANG Q L ， SHEN Y ， ZHANG S Q ， et al . First-principles insights into Cs/NF 3 co-activation effects on near-infrared In 0.53 Ga 0.47 As （0 0 1） surface ［J］. Materials Science in Semiconductor Processing ， 2022 ， 144 ： 106575 . doi: 10.1016/j.mssp.2022.106575 http://dx.doi.org/10.1016/j.mssp.2022.106575

CHEN L ， SHEN Y ， YANG X D ， et al . Research on Cs/O activation process of near-infrared In 0.53 Ga 0.47 As photocathodes ［J］. Journal of Alloys and Compounds ， 2020 ， 831 ： 154869 . doi: 10.1016/j.jallcom.2020.154869 http://dx.doi.org/10.1016/j.jallcom.2020.154869

WANG Z H ， ZHANG Y J ， LI S M ， et al . Enhancement of near-infrared response for GaAs-based photocathode with laminated graded-bandgap structure： theory and experiment ［J］. Journal of Materials Research and Technology ， 2022 ， 19 ： 2008 - 2017 . doi: 10.1016/j.jmrt.2022.05.099 http://dx.doi.org/10.1016/j.jmrt.2022.05.099

荣敏敏，张益军，李诗曼，等 . 基于扫描聚焦XPS技术的InGaAs表面清洁研究［J］. 光学学报， 2021 ， 41 （ 5 ）： 131 - 139 . doi: 10.3788/aos202141.0516004 http://dx.doi.org/10.3788/aos202141.0516004

RONG M M ， ZHANG Y J ， LI SH M ， et al . InGaAs surface cleaning based on scanning focused XPS technique ［J］. Acta Optica Sinica ， 2021 ， 41 （ 5 ）： 131 - 139 . （in Chinese） . doi: 10.3788/aos202141.0516004 http://dx.doi.org/10.3788/aos202141.0516004

李姗，张益军，荣敏敏，等 . InGaAs光电阴极制备工艺中的原位光电子能谱［J］. 光学学报， 2022 ， 42 （ 1 ）： 210 - 217 . doi: 10.3788/AOS202242.0116001 http://dx.doi.org/10.3788/AOS202242.0116001

LI SH ， ZHANG Y J ， RONG M M ， et al . In - situ photoelectron spectroscopy of InGaAs photocathode in preparation process ［J］. Acta Optica Sinica ， 2022 ， 42 （ 1 ）： 210 - 217 . （in Chinese） . doi: 10.3788/AOS202242.0116001 http://dx.doi.org/10.3788/AOS202242.0116001

ZHANG Y J ， ZHANG K M ， LI S M ， et al . Effect of excessive Cs and O on activation of GaAs（100） surface： from experiment to theory ［J］. Journal of Applied Physics ， 2020 ， 128 （ 17 ）： 173103 . doi: 10.1063/5.0028042 http://dx.doi.org/10.1063/5.0028042

ZHANG Y J ， QIAN Y S ， FENG C ， et al . Improved activation technique for preparing high-efficiency GaAs photocathodes ［J］. Optical Materials Express ， 2017 ， 7 （ 9 ）： 3456 - 3465 . doi: 10.1364/ome.7.003456 http://dx.doi.org/10.1364/ome.7.003456

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Cs/NF3 activation of InGaAs photocathode

DOI：10.37188/OPE.20233109.1277

摘要

Abstract

关键词

Keywords

references

Cs/NF₃ activation of InGaAs photocathode