Study on interfacial bonding strength during fabrication of micro inertial switch

DU Liqun; KONG Dejian; WANG Shuai; CAI Xiaoke; GUO Bingjiang

doi:10.37188/OPE.20233110.1464

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Study on interfacial bonding strength during fabrication of micro inertial switch

Micro/Nano Technology and Fine Mechanics | 更新时间：2023-05-25

- Study on interfacial bonding strength during fabrication of micro inertial switch
- Optics and Precision Engineering Vol. 31, Issue 10, Pages: 1464-1474(2023)
- 作者机构：
  
  1.大连理工大学高性能精密制造全国重点实验室，辽宁大连116024
  2.大连理工大学辽宁省微纳米系统重点实验室，辽宁大连116024
- 作者简介：
- 基金信息：
- DOI：10.37188/OPE.20233110.1464
  CLC： TG111.4;TP212
- Received：29 November 2022，
  
  Revised：07 January 2023，
  
  Published：25 May 2023
- 稿件说明：
移动端阅览
杜立群,孔德健,王帅等.微惯性开关制作过程中界面结合强度研究[J].光学精密工程,2023,31(10):1464-1474.

DU Liqun,KONG Dejian,WANG Shuai,et al.Study on interfacial bonding strength during fabrication of micro inertial switch[J].Optics and Precision Engineering,2023,31(10):1464-1474.
杜立群,孔德健,王帅等.微惯性开关制作过程中界面结合强度研究[J].光学精密工程,2023,31(10):1464-1474. DOI： 10.37188/OPE.20233110.1464.

DU Liqun,KONG Dejian,WANG Shuai,et al.Study on interfacial bonding strength during fabrication of micro inertial switch[J].Optics and Precision Engineering,2023,31(10):1464-1474. DOI： 10.37188/OPE.20233110.1464.

摘要

在利用微电铸工艺制作惯性开关的过程中，经常会出现由于界面结合强度低而引起的铸层翘起问题。微电铸层与基板的界面结合强度低会降低微开关的制作成品率、延长制作周期、增加制作成本。针对这一问题，本文从界面钝化膜的角度，采用了“电解活化去除钝化膜”和“引入Cu过渡层”的方法。为探究钝化膜对界面结合强度的影响，通过Materials Studio软件对不同钝化膜去除率模型的界面结合能进行仿真计算，计算结果表明钝化膜去除率越高越有利于界面结合强度的提高，在完全去除钝化膜后界面结合强度提高了197%；为探究过渡金属对界面结合强度的影响，分别以Cu，Cr，Ti作为过渡层，与不锈钢基板和镍铸层建立结合层体系，计算体系的结合能，计算结果表明Cu与基板、Cu与铸层的结合能最高，与未引入过渡金属相比，引入Cu后界面结合强度提高了81%。在仿真研究结果的基础上，开展了电解活化实验，通过电解活化法去除了基板表面的钝化膜，实验结果表明：电解活化区域铸层的界面结合强度明显高于未活化区域铸层的界面结合强度；同时开展了铜过渡层实验，对比了有无Cu过渡层的界面结合强度，实验结果表明：引入Cu后，铸层的界面结合强度明显提高。在上述仿真和实验结果的基础上，制作出尺寸为23 mm×20 mm、总高度为900 μm的微惯性开关。

Abstract

During the fabrication of inertial switches via micro-electroforming， casting layer warping is frequently encountered owing to the low bonding strength at the interface. Such low bonding strength between the micro-electrocasting layer and substrate is expected to reduce the production yield and prolong the production cycle while increasing production costs. To address this problem， in this paper， methods that involve "removing a passivated film using electrolytic activation" and "introducing a Cu transition layer" are proposed from an interface passivated film perspective. To explore the impact of the passivation film on the interface binding strength， the interface binding energies of different passivation film removal models are simulated using the Materials Studio software. The calculation results reveal that the higher the passivation film removal rate， the better the interface binding strength. The interface binding strength increases by 197% after the passivation film is completely removed. To examine the influence of transition metals on the interface binding strength， Cu， Cr， and Ti are used as transition layers to establish a bonding layer system with a stainless-steel substrate and nickel cast layer， and the binding energy of the system is determined. The calculation results reveal that the binding energy between Cu and the substrate， as well as between Cu and the cast layer， is higher. The interfacial bonding strength increases by 81% with the introduction of Cu compared to that without the introduction of the transition metal. Based on the simulation results， electrolytic activation experiments are conducted to remove the passivated film from the substrate surface using electrolytic activation. The experimental results indicate that the interfacial bonding strength of the cast layer in the electrolytic activation zone is significantly higher than that in the non-activated zone. Simultaneously， a similar Cu transition layer experiment is conducted， and it demonstrates that the interface bonding strength of the cast layer is significantly improved after introducing the Cu transition layer. Based on the aforementioned simulation and experimental results， a micro inertial switch with a size of 23 × 20 mm and a total height of 900 μm is fabricated.

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